Multiwavelength plasmonic optoelectronic memristor for color image classification via physical reservoir

Z Zhuangzhuang Li Y Yang Liu J Jiajuan Shi X Xuanyu Shan (Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China) Y Ya Lin (State Key Laboratory of Integrated Optoelectronics, Northeast Normal University , 5268 Renmin Street, Changchun 130024,) Y Ye Tao (State Key Laboratory of Radiation Medicine and Protection, School of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, Biomedical Basic Research Center (BBRC) of Jiangsu) X Xiaoning Zhao Y Yongjun Dong Z Zhongqiang Wang (Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China) H Haiyang Xu Y Yichun Liu

Abstract

Optoelectronic memristors have tremendous potential for constructing highly efficient neuromorphic visual systems because of their integration of sensing, storage, and computing. Here, a multiwavelength-modulated plasmonic optoelectronic memristor is developed using Au/WO3 nanocomposite. Benefitting from the size-dependent localized surface plasmon resonance absorption property, the distinction of the R (680 nm), G (550 nm), and B (450 nm) light response can be utilized in a single device. Based on this, multiwavelength synaptic plasticity is mimicked, including excitatory postsynaptic current, paired-pulse facilitation, and spike-number-dependent plasticity. Furthermore, 4-bit reservoirs with RGB inputs are implemented for constructing an RGB reservoir computing system. Consequently, considerable accuracy (98.3%) for classification of color images is implanted via the RGB input mode, demonstrating the advantage of color information for complicated neuromorphic tasks. This work demonstrates the potential of the plasmonic optoelectronic memristors for high-performance neuromorphic vision systems.

Article Details

Volume / Issue Vol. 129, Issue 3
Published July 20, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Z

Zhuangzhuang Li

Y

Yang Liu

J

Jiajuan Shi

X

Xuanyu Shan

Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China

Y

Ya Lin

State Key Laboratory of Integrated Optoelectronics, Northeast Normal University , 5268 Renmin Street, Changchun 130024,

Y

Ye Tao

State Key Laboratory of Radiation Medicine and Protection, School of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, Biomedical Basic Research Center (BBRC) of Jiangsu

X

Xiaoning Zhao

Y

Yongjun Dong

Z

Zhongqiang Wang

Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China

H

Haiyang Xu

Y

Yichun Liu