Hidden ordered compound-layer and its tailoring of the electronic/optical property in Ge2Sb2SexTe5−x alloys

Abstract

Ge2Sb2SeₓTe5−ₓ (0 < x < 5, GSST) alloys represent an emerging class of phase-change materials for integrated photonics. However, the microscopic origins underlying their superior performance compared to the parent compound Ge2Sb2Te5 remain elusive. By using atomic simulations, this work elucidates that the thermal stability and low optical loss of GSST are fundamentally governed by the formation of an in-layer compound-like structure with SeTe2 or Se2Te stoichiometry depending on the Se content, contrasting with the previously believed pure-element-layered model where Se and Te atoms occupy separate layers inside GSST. The newly identified compound-layered structures maintaining stability at temperatures above 370 K yield an enlarged bandgap, weakened antibonding character, and more importantly, a moderate refractive index as well as a decreased extinction coefficient, which align better with the experiment compared to the previously believed model. The present findings not only help bridge the long-standing theory–experiment gap regarding the optical properties of GSST by redefining its atomic structure but also establish local chemical ordering as a critical materials design principle for high-performance photonics.