Applied Physics Letters

Vol. 129, Issue 5 Issue 5 2026
55
Articles

Articles in this Issue

Ultrathin fully strained GaN channel high electron mobility transistors on AlN-on-sapphire templates engineered by ferroelectric ScAlN epilayers

JiaJia Yao, JunShuai Xue, GuanLin Wu et al. Aug 03, 2026 10.1063/5.0325273

In this work, we demonstrate fully strained GaN channel high electron mobility transistors (HEMTs) with superlattice barriers on AlN-on-sapphire templates by plasma-assisted molecular beam epitaxy. He...

Device-area selection of memristive transport regimes in epitaxial Hf0.5Zr0.5O2-based ferroelectric devices

Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo et al. Aug 03, 2026 10.1063/5.0339149

Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-mediated transport of...

Improved light extraction and thermal management in thin-film GaAs LEDs using hemispherical ZnSe lenses

Ivan Radevici, Mouad Bikerouin, Benoît Behaghel et al. Aug 03, 2026 10.1063/5.0339619

High-index optical elements enable improved photon outcoupling from high-refractive index III–V emitters, but their feasibility on electrically driven GaAs light-emitting diodes (LEDs) has been limite...

Heterocyclic aromatic amine-modified hole transport layer enables energy level regulation for enhanced performance of deep blue QLEDs

Yiheng Huang, Zhanpeng Qin, Tianhao Wang et al. Aug 03, 2026 10.1063/5.0335893

Quantum dots (QDs) exhibit great promise for next-generation displays, yet deep blue quantum dots light-emitting diodes [deep blue QLEDs, CIE (International Commission on illumination) y < 0.06...

High-thermal-conductivity polycrystalline diamond grown on GaN via a cyclic-methane-modulation-assisted strategy

Yutao Fang, Yabing Li, Ziling Cai et al. Aug 03, 2026 10.1063/5.0340227

The self-heating effect severely limits the performance and reliability of GaN high-electron-mobility transistors (HEMTs). Direct deposition of thin-film polycrystalline diamond (PCD) on GaN is regard...

Probe–suspended membrane resonance model for obtaining out-of-plane shear modulus and prestress in graphene

Wenyuan Liu, Yuhao Li, Keshun Zhang et al. Aug 03, 2026 10.1063/5.0338752

The out-of-plane shear modulus of two-dimensional (2D) materials is critical for understanding their strain-modulated electronic, optical, and tribological behavior. However, existing experimental met...

Ferroelectric nitrogen-polar ScAlN heterostructures on 4H-SiC enabled by thin AlN buffer layers

Samuel Yang, Yiran Li, Zetian Mi Aug 03, 2026 10.1063/5.0339950

The expansive functional landscape of ferroelectric nitrides has sharpened interest in host platforms that can preserve excellent structural quality while extending operation to high-temperature, hars...

Heat superdiffusion in carbon nanotubes

Yuanyang Ren, Yang Wang, Kai Wu et al. Aug 03, 2026 10.1063/5.0338597

Like many one-dimensional systems, carbon nanotubes are known to exhibit a divergent thermal conductivity as the length of the nanotube is increased, but the precise form of this divergence has so far...

Self-powered solar-blind ultraviolet detection and integrated electroluminescence performance of Ga2O3:Er-based devices

Lei Wang, Gaoliang Fu, Ruipeng Hou et al. Aug 03, 2026 10.1063/5.0332720

Gallium oxide (Ga2O3) exhibits broad application prospects in solar-blind ultraviolet detection and rare-earth-activated electroluminescence (EL). However, the high-density intrinsic defects within Ga...

Spring-integrated low-frequency ME resonator with strong coupling capability and low equivalent magnetic noise

Zhaoqiang Chu, Jianyu Cui, MohammadJavad Pourhosseini Asl et al. Aug 03, 2026 10.1063/5.0332201

Resonant magnetoelectric (ME) sensors offer the advantages of high sensitivity and inherent narrow-band filtering capability. However, the development of ultra-low-frequency (ULF) ME resonators combin...

Critical behavior of a novel layered ferromagnetic semiconductor Cr1.17Ga1.47Se4

Jiachen Liu, Yahui Li, Junkai Jing et al. Aug 03, 2026 10.1063/5.0324390

Layered magnetic semiconductors have attracted considerable interest due to their rich magnetic properties and potential applications in low-dimensional spintronics. Here, we report a novel layered ma...

Bandgap-dependent defect properties in mixed-halide perovskites

Peiyan Zhang, Haojun Hu, Dayu Liu et al. Aug 03, 2026 10.1063/5.0331546

Defects in wide-bandgap perovskite solar cells critically limit device performance, yet their chemical nature and bandgap-dependent evolution remain insufficiently understood. Here, we investigate the...

Unipolar ferroelectric synapses with subfemtojoule energy consumption

Gaoshuai Cao, Weiyang Wang, Guanghong Yang et al. Aug 03, 2026 10.1063/5.0341943

Neuromorphic computing demands artificial synapses that combine ultra-low energy consumption with simple modulation schemes. Here, we demonstrate unipolar ferroelectric tunnel junction synapse based o...

Theoretical strategy for coherent perfect absorption based on photonic time crystals: Interference and energy control

Shuo Xu, Hai-Feng Zhang Aug 03, 2026 10.1063/5.0329066

Photonic time crystals (PTCs) are artificial materials whose electromagnetic (EM) properties vary with time, enabling the realization of physical phenomena and energy conversion devices through the ut...

Low optical loss electrical isolation for multi-section monolithic GaSb-based photonic circuits

Md Ajwaad Zaman Quashef, Nouman Zia, Jukka Viheriälä et al. Aug 03, 2026 10.1063/5.0343993

Monolithic photonic integrated circuit (PIC) platforms exploiting III–V materials combine passive and active waveguide structures in multi-section optoelectronic device architectures. Their operation...

Parametric resonance and RF-to-THz frequency conversion in semiconductor plasmonic crystals

G. R. Aizin, J. Mikalopas, M. Shur Aug 03, 2026 10.1063/5.0342493

We show that plasma excitations in nanoscale field-effect transistor structures with periodically alternating gated and ungated regions (plasmonic crystals) exhibit a band structure with finite curvat...

Prediction of mass spectra using large chemical language models and verification of adaptability in data-scarce domains

Satoki Muto, Akiko Kumada, Masahiro Sato Aug 03, 2026 10.1063/5.0326955

Machine learning methods for predicting the electron ionization mass spectra from molecular structures have shown promise for environmental chemical identification, but their performance under domain-...

Defect engineering via O-Se co-treatment enabled high-performance self-powered Au/O-Se MoS2/In photodetector

Xinyue Pan, Kaixi Shi, Jinhua Li et al. Aug 03, 2026 10.1063/5.0345286

Self-powered photodetectors (SPPDs) are essential for energy-self-sufficient optical imaging and optical communication applications. However, the defects generated in two-dimensional transition metal...

Electrostatically confined charge transport in split-gated MoS2 device

Nhat Anh Nguyen Phan, Inayat Uddin, Amirhossein Nazarian-Firouzabadi et al. Aug 03, 2026 10.1063/5.0341242

As semiconductor scaling approaches the quantum limit, transport phenomena increasingly deviate from classical behavior, necessitating the development of electrostatically defined low-dimensional arch...

Wet-spinning vanadium oxide-based coaxial fibers for the construction of zinc-ion batteries

Gengzhi Sun, Ning He, Fanjie Shi et al. Aug 03, 2026 10.1063/5.0346592

Fiber-shaped aqueous zinc-ion batteries (FAZIBs) emerge as a promising energy storage device for future wearable electronics. Vanadium-based oxides possess high theoretical capacity, benefiting from t...

Toroidal quasi-dark supermodes in microwave dielectric metasurfaces

K. Ntokos, A. Politikou, G. Nousios et al. Aug 03, 2026 10.1063/5.0324015

We report a class of dielectric metasurfaces that support quasi-dark microwave resonances with tailored toroidal and antitoroidal field profiles. The metasurfaces are realized using quadrumers of high...

Synergistic effect of waste sisal fiber-derived carbon and graphene oxide for performance enhancement of sulfur-based thermally regenerative batteries

Shuai Tang, Liulin Que, Yichao An et al. Aug 03, 2026 10.1063/5.0339265

Sulfur-based thermally regenerative batteries (STRBs) offer a promising approach for low-grade waste heat recovery. To enhance their power output, we develop a sulfur electrode using a composite of si...

High-performance phototransistors based on heterojunctions of organic semiconductors and 2D perovskite single crystals

Xiaojun Li, Ping-An Chen, Zenghui Chen et al. Aug 03, 2026 10.1063/5.0328568

Two-dimensional (2D) organic–inorganic hybrid perovskites are promising candidates for optoelectronic applications owing to their excellent optoelectronic properties and enhanced stability compared to...

High quantum-efficiency InGaAs/InP photodiodes heterogeneously integrated on SiN waveguides

Son P. Le, Taegeon Kim, Kinson Fang et al. Aug 03, 2026 10.1063/5.0336859

The integration of photodiodes with optical waveguides is increasingly important for photonic integrated circuit development. We report modified uni-traveling-carrier photodiodes heterogeneously integ...

Constraints on atomistic disorder for scalable electron spin shuttling

Raphaël J. Prentki, Pericles Philippopoulos, Mohammad Reza Mostaan et al. Aug 03, 2026 10.1063/5.0345368

Electron spin shuttling—the gate-controlled, coherent transport of electrons between qubit registers—increases qubit connectivity and enables efficient quantum-error-correction schemes. It is emerging...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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