High-performance phototransistors based on heterojunctions of organic semiconductors and 2D perovskite single crystals

X Xiaojun Li P Ping-An Chen (School of Electrical Engineering, University of South China 1 , Hengyang 421001,) Z Zenghui Chen (School of Electrical Engineering, University of South China 1 , Hengyang 421001,) H Hongzhi Ouyang (School of Electrical Engineering, University of South China 1 , Hengyang 421001,) X Xincan Qiu (School of Electronic Information, Hunan First Normal University 2 , Changsha 410205,) Z Ze Li Y Yu Liu J Jiangnan Xia T Tao Han

Abstract

Two-dimensional (2D) organic–inorganic hybrid perovskites are promising candidates for optoelectronic applications owing to their excellent optoelectronic properties and enhanced stability compared to their three-dimensional counterparts. However, the optoelectronic performance of 2D perovskite single crystals is often constrained by low charge transport efficiency. Herein, we fabricated a (PEA)2PbI4/PDVT-10 heterojunction and corresponding phototransistor by transferring a mechanically exfoliated (PEA)2PbI4 single crystal onto a PDVT-10 film. This design strategically combines the exceptional light-harvesting ability of the perovskite with the high charge carrier mobility and gate tunability of the organic semiconductor. As a result, the concerted action of the photoconductive and field effects within the heterojunction yields outstanding photodetection metrics. Compared to the PDVT-10 device, the (PEA)2PbI4/PDVT-10 device shows a twofold improvement in photosensitivity (Ilight/Idark ∼ 1.1 × 103 @ 64 mW cm−2), a nearly three-order-of-magnitude increase in photocurrent, and a 32-fold higher responsivity (0.65 A W−1, @ 0.01 mW cm−2). This study provides a viable strategy for integrating the superior properties of perovskite single crystals and organic semiconductors to fabricate high-performance photodetectors.

Article Details

Volume / Issue Vol. 129, Issue 5
Published August 03, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

X

Xiaojun Li

P

Ping-An Chen

School of Electrical Engineering, University of South China 1 , Hengyang 421001,

Z

Zenghui Chen

School of Electrical Engineering, University of South China 1 , Hengyang 421001,

H

Hongzhi Ouyang

School of Electrical Engineering, University of South China 1 , Hengyang 421001,

X

Xincan Qiu

School of Electronic Information, Hunan First Normal University 2 , Changsha 410205,

Z

Ze Li

Y

Yu Liu

J

Jiangnan Xia

T

Tao Han