Applied Physics Letters
Articles in this Issue
Internal-loss-limited 5.5% wall-plug efficiency in index-guided AlGaN UV-B laser diodes with polarization-doped cladding layers
This study identifies the dominant factor governing wall-plug efficiency (WPE) in AlGaN-based UV-B laser diodes. While previous studies have mainly focused on optical confinement, the limiting mechani...
Stable asymmetric magnetization reversal in epitaxial Co(001)/CoO(001) bilayer
The exchange bias (EB) in ferromagnetic/antiferromagnetic (FM/AFM) bilayer systems causes a shift in the magnetic hysteresis curve after field cooling through the Néel temperature of the AFM. In some...
Separating intrinsic and domain-mediated anomalous Hall conductivity in Co3Sn2S2 via contact engineering
Separating the momentum-space intrinsic Berry-curvature contribution to the anomalous Hall conductivity (AHC) from domain-mediated and extrinsic contributions in bulk ferromagnetic Weyl semimetals rem...
<i>In situ</i> electric field-assisted curing enables low dielectric constant and loss through polarization suppression
Low-dielectric materials are crucial for reducing RC delay in high-density integrated circuits. Here, we report an electric field-assisted in situ curing strategy for dicyclopentadiene-based epoxy fil...
Homoepitaxial GaN-on-GaN trench MOSFETs with 438 MW/cm2 figure of merit and improved gate reliability
In this paper, we report enhanced high-voltage blocking capability and improved gate dielectric reliability in vertical GaN-on-GaN trench metal–oxide–semiconductor field-effect transistors (MOSFETs) t...