Heterocyclic aromatic amine-modified hole transport layer enables energy level regulation for enhanced performance of deep blue QLEDs

Y Yiheng Huang (State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering Sun Yat‐sen (Zhongshan) University Guangzhou 510275 China) Z Zhanpeng Qin (School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China) T Tianhao Wang (Institute for Advanced Materials and Technology, State Key Laboratory for Advanced Metals and Materials) X Xianggao Li (School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China) S Shirong Wang (State Key Laboratory of Membrane Biology and Beijing Key Laboratory of Cardiometabolic Molecular Medicine, Institute of Molecular Medicine, College of Future Technology and Peking-Tsinghua Center for Life Sciences and International Data Group/McGovern Institute for Brain Research, Peking University) H Hongli Liu

Abstract

Quantum dots (QDs) exhibit great promise for next-generation displays, yet deep blue quantum dots light-emitting diodes [deep blue QLEDs, CIE (International Commission on illumination) y < 0.06] lag behind red and green counterparts due to energy level mismatches and imbalanced carrier mobility. In this work, 2-aminopyridine was employed at the interface between the hole transport layer and the emitting layer to construct stepwise energy level regulation. The mechanism was elucidated through density functional theory calculations, photophysical characterization, and surface morphology analysis. The modifier deepens the HOMO level of the hole transport layer from −5.75 to −5.97 eV and increases hole mobility from 4.08 × 10−7 to 1.56 × 10−6 cm2 V−1 s−1. The device based on the modified hole transport layer achieved a record external quantum efficiency of 23.16% in deep blue QLED (CIE y = 0.027). Interface modification demonstrates an effective approach to high-efficiency deep blue QLEDs and supports the commercialization of QLEDs.

Article Details

Volume / Issue Vol. 129, Issue 5
Published August 03, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

Y

Yiheng Huang

State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering Sun Yat‐sen (Zhongshan) University Guangzhou 510275 China

Z

Zhanpeng Qin

School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China

T

Tianhao Wang

Institute for Advanced Materials and Technology, State Key Laboratory for Advanced Metals and Materials

X

Xianggao Li

School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China

S

Shirong Wang

State Key Laboratory of Membrane Biology and Beijing Key Laboratory of Cardiometabolic Molecular Medicine, Institute of Molecular Medicine, College of Future Technology and Peking-Tsinghua Center for Life Sciences and International Data Group/McGovern Institute for Brain Research, Peking University

H

Hongli Liu