Applied Physics Letters

High quantum-efficiency InGaAs/InP photodiodes heterogeneously integrated on SiN waveguides

S Son P. Le (Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,) T Taegeon Kim (Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,) K Kinson Fang (Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,) A Andreas Beling J Joe C. Campbell (Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,)

Abstract

The integration of photodiodes with optical waveguides is increasingly important for photonic integrated circuit development. We report modified uni-traveling-carrier photodiodes heterogeneously integrated onto Si3N4 optical waveguides, achieving quantum efficiencies up to 91% at 1550 nm. The combination of high quantum efficiencies and ultra-low dark currents yields high signal-to-noise ratios over a broad range of optical signal powers.

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Article Details

Volume / Issue Vol. 129, Issue 5
Published August 03, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (5)

S

Son P. Le

Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,

T

Taegeon Kim

Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,

K

Kinson Fang

Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,

A

Andreas Beling

J

Joe C. Campbell

Department of Electrical and Computer Engineering, The University of Virginia , Charlottesville, Virginia 22904,

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