Applied Physics Letters

Vol. 126, Issue 1 Issue 1 2025
78
Articles

Articles in this Issue

E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks

Jiangnan Liu, Ding Wang, Md Tanvir Hasan et al. Jan 06, 2025 10.1063/5.0217732

A fully epitaxial ferroelectric ScAlN/AlGaN/GaN HEMT coupled with an ultrathin ScN charge trap layer for enhancement-mode operation is demonstrated. The ultrathin ScN acts as an electron reservoir to...

Field-free spin–orbit switching of canted magnetization in Pt/Co/Ru/RuO2(101) multilayers

Yunzhuo Wu, Tong Wu, Haoran Chen et al. Jan 06, 2025 10.1063/5.0246672

Achieving field-free current-induced switching of perpendicular magnetization is crucial for the advancement of spin–orbit torque magnetic random access memory technology. In our study on the Pt/Co/Ru...

Reduced sound velocity in PbZrO3 thin film during antiferroelectric to ferroelectric transition revealed by picosecond acoustics

Shuai Wang, Yangyang Si, Wenjun Wang et al. Jan 06, 2025 10.1063/5.0244418

The antiferroelectric-to-ferroelectric (AFE-FE) phase transition has attracted considerable attention due to its potential applications in high-strain transducers, thermal switching, and pulsed-power...

Imprinting of stochastic magnetic domain configurations by fluctuating interlayer coupling

Mangyuan Ma, Le Zhao, Wanjun Jiang Jan 06, 2025 10.1063/5.0245044

Competing interaction within magnetic materials leads to the formation of complex magnetic domain configurations such as stripe domains, labyrinthine domains, magnetic bubbles, and skyrmions, which ar...

Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (&amp;gt;4.3 <i>μ</i> m/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. <b>125</b> , 242106 (2024)]

Dong Su Yu, Lingyu Meng, Hongping Zhao Jan 06, 2025 10.1063/5.0253537

Visualization of the phonon evolution behavior in NaNbO3 single crystal during field-induced phase transition by <i>in situ</i> Raman spectroscopy

L. G. Wang, X. L. Jiang, C. M. Zhu et al. Jan 06, 2025 10.1063/5.0243467

NaNbO3 (NN) is a significant lead-free alternative for pulse power systems or nonvolatile memories due to its antiferroelectric P phase at room temperature. However, a comparable free energy between P...

Phase stability and transition behaviors of (Bi<i>x</i>In1−<i>x</i>)2Se3 alloy

Huachun Wang, Xuefen Cai, Wei Li et al. Jan 06, 2025 10.1063/5.0243242

The Bi2Se3–In2Se3 layered system has garnered significant attention and extensive research due to its versatile properties, yet its structural properties and phase stability remain elusive. Here, usin...

Control of structural phase transition and energy storage behavior through cooling rate in (Bi0.5Na0.5)TiO3–BaTiO3 ceramics

Yuri Ohshima, Yuta Ochiai, Yuka Takagi et al. Jan 06, 2025 10.1063/5.0239629

In lead-free (Bi0.5Na0.5)TiO3–BaTiO3 (BNT–BT) ceramics, the BNT-rich side has R3c ferroelectric domains at room temperature, and modulated P4bm tetragonal nanodomains develop within the R3c rhombohedr...

Printing quantum dot color conversion layer in etch pits using EHD technology based on mini-LED

Xinyi Wang, Zhaoyu Chen, Haojie Zhou et al. Jan 06, 2025 10.1063/5.0244782

The rapid development of display technologies has boosted the demand for efficient and high-resolution color conversion techniques. However, conventional approaches such as photolithography and inkjet...

Millikelvin Nb nanoSQUID-embedded tunable resonator fabricated with a neon focused-ion-beam

Jamie A. Potter, Laith Meti, Gemma Chapman et al. Jan 06, 2025 10.1063/5.0230505

SQUID-embedded superconducting resonators are of great interest due to their potential for coupling highly scalable superconducting circuits with quantum memories based on solid-state spin ensembles....

Photon number-resolving aluminum kinetic inductance detectors

X. Dai, H. Wang, Y. Wang et al. Jan 06, 2025 10.1063/5.0234649

We study the multi-photon energy resolution and demonstrate photon counting up to about 30 photons at near-infrared wavelengths in a kinetic inductance detector made from aluminum (Al) film. The detec...

Observation of flexoelectric effect in PECVD silicon nitride

B. H. Nguyen, C. Wu, P. Czarnecki et al. Jan 06, 2025 10.1063/5.0244972

Flexoelectricity, a universal electromechanical coupling effect present in all dielectric materials, has garnered significant theoretical and experimental interest in recent years, particularly in fer...

Observation of topological edge states in photonic bilayer SSH lattice

Bin Zhang, Weizhao Cheng, Weijie Liu et al. Jan 06, 2025 10.1063/5.0241042

We present experimental observations of topological edge states in photonic bilayer Su–Schrieffer–Heeger (SSH) lattices. Using the femtosecond laser direct writing technology, we establish two distinc...

Three-channel terahertz beam steering based on polarization multiplexed metasurfaces

Pengxuan Li, Fei Fan, Hao Wang et al. Jan 06, 2025 10.1063/5.0246821

Terahertz (THz) beam steering is of great significance for realizing high-speed communication, radar scanning, and information processing, but it is limited by the number of channels and strong crosst...

Effects of temperature on surface plasmon resonance in organic thin-film transistor

Qing He Wang, Yu Heng Deng, Yuan Xiao Ma et al. Jan 06, 2025 10.1063/5.0241847

Pentacene organic thin-film transistors (OTFTs) adopting n-Si gate electrodes with a wide range of doping concentrations (1015–1020 cm−3) are fabricated to study the effects of the quantum-mechanical...

Multi-field coupling challenges the stability test of silicon solar cells

Na Wang, Qi Deng, Xuehui Gu et al. Jan 06, 2025 10.1063/5.0245800

UV-induced degradation is an important factor affecting the stability of silicon heterojunction (SHJ) solar cells. Many works investigated the root cause of this degradation previously, but its coupli...

Synthetic frequency dimension in a spatiotemporally driven phononic ring resonator

Minwook Kyung, Jagang Park, Yung Kim et al. Jan 06, 2025 10.1063/5.0228315

The concept of synthetic dimensions offers a unique approach to exploring higher-dimensional physics within lower-dimensional systems. Since its initial demonstration in atomic systems, synthetic dime...

Compact high-precision Jones matrix metasurfaces for producing high-order vector vortex waves at microwave frequencies

Qian Liu, Difei Liang, Xin Yao et al. Jan 06, 2025 10.1063/5.0244821

Compact, high-precision Jones matrix metasurfaces, employing quasi-two-dimensional metasurfaces composed of a single-layer quasi-H-type patch, are presented for producing high-order vector vortex wave...

Optimization of fin-slanted angles for enhanced electrical performance in lateral <i>β</i>-Ga2O3 MOSFETs

Haiwen Xu, Jishen Zhang, Xiao Gong Jan 06, 2025 10.1063/5.0237715

In this work, the influence of fin-slanted angles (α) on the electrical performance of lateral β-Ga2O3 MOSFETs was investigated through a combination of experiments and Sentaurus TCAD simulations. The...

Enhanced red-light photorefractive response speed of LiNbO3 crystals for full color holographic display

Shuolin Wang, Yidong Shan, Zhaojie Wu et al. Jan 06, 2025 10.1063/5.0233431

As a promising candidate material for holographic displays, lithium niobate (LN) is limited by its slow photorefractive (PR) response. Recently, it was discovered that Bi3+, with its lone-pair electro...

Large piezoelectric response in paraelectric region of PMN-32PT near morphotropic phase boundary

Moussa Kangama, Zhengwang He, Xiaoming Chen et al. Jan 06, 2025 10.1063/5.0239226

We report an effective piezoelectric coefficient of deff = 40 ± 6 pm/V in the paraelectric phase of (1-x)Pb(Mg1/3Nb2/3)O3−(x)PbTiO3 single crystals with x = 0.32 (PMN-32PT), which is near the morphotr...

Tunable interfacial Rashba spin–orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures

Zhenghang Zhi, Yuyang Wu, Hanzhi Ruan et al. Jan 06, 2025 10.1063/5.0233964

We report the manipulation of the Rashba-type spin–orbit coupling (SOC) in molecular beam epitaxy-grown AlxIn1−xSb/InSb/CdTe quantum well heterostructures. The effective band bending warrants a robust...

Dielectric reliability and interface trap characterization in MOCVD grown <i>in situ</i> Al2O3 on β-Ga2O3

Saurav Roy, Arkka Bhattacharyya, Carl Peterson et al. Jan 06, 2025 10.1063/5.0234267

In this article, we investigate the in situ growth of Al2O3 on β-Ga2O3 using metal-organic chemical vapor deposition at a high temperature of 800 °C. The Al2O3 is grown within the same reactor as the...

Flexible 3ω sensors on submicron-thick parylene substrates for thermal conductivity measurements of liquids and soft materials

Ryuto Yamasaki, Yuki Matsunaga, Yuki Akura et al. Jan 06, 2025 10.1063/5.0239596

Measurement of thermal conductivity in liquids and soft materials is pivotal across various sectors, from designing cooling systems for electronic devices to monitoring biological parameters via medic...

Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

Balasubramanian Sundarapandian, Mohit Raghuwanshi, Patrik Straňák et al. Jan 06, 2025 10.1063/5.0231694

Molybdenum (Mo) due to its optimal structural, physical, and acoustic properties finds application as electrode material in aluminum scandium nitride and aluminum nitride (AlN) based bulk acoustic wav...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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