Applied Physics Letters

Vol. 126, Issue 1 Issue 1 2025
78
Articles

Articles in this Issue

Coupling of photoluminescence and flexoelectricity in all-inorganic flexible transparent heterojunctions induced by mechanical strain

Tinghong Yang, Hao Gu, Xinyan Zhang et al. Jan 06, 2025 10.1063/5.0242146

Flexible and transparent optoelectronic technology has shown great application prospects in various fields. Introducing rare earth luminescent centers into inorganic ferroelectric systems can benefit...

Reliability of NiO/β-Ga2O3 bipolar heterojunction

Hehe Gong, Xin Yang, Matthew Porter et al. Jan 06, 2025 10.1063/5.0243015

Ultra-wide bandgap (UWBG) NiO/β-Ga2O3 p–n junction has recently emerged as a key building block for emerging electronic and optoelectronic devices. However, the long-term reliability of this bipolar j...

Giant electrostriction in textured La2Ce2O7 ceramics: A promising lead-free alternative for electromechanical conversion

Mikhail V. Talanov, Mikhail A. Marakhovsky, Annu Kumar Lakshya et al. Jan 06, 2025 10.1063/5.0242385

The search for high-performance, lead-free materials with tailored electromechanical properties is crucial for the advancement of energy harvesting and actuator technologies. While piezoelectric mater...

<i>In situ</i> determination of the optical axis orientation in a single grain using time-domain Brillouin microscopy

M. Lejman, G. Vaudel, V. Juvé et al. Jan 06, 2025 10.1063/5.0245340

In this paper, we develop a method that combines optical birefringence properties and time-domain Brillouin scattering microscopy to determine in situ the optical axis orientation of each single micro...

450 nm light-induced upconversion ultraviolet-C photons for optical information encryption and sterilization

Lingzhu Zi, Yanmin Yang, Shiji Feng et al. Jan 06, 2025 10.1063/5.0250356

Ultraviolet-C (UVC) photons play a key role in many fields such as covert communication, bacterial inactivation, information storage, and encryption. Because the UVC component of solar spectrum is alm...

Synaptic transistor based on reversible hydrogenation of graphene channel

Yiqian Hu, Lei Huang, Quanhong Chang et al. Jan 06, 2025 10.1063/5.0235465

Graphene transistors with a gate-controlled transition of neuromorphic functions between artificial neurons and synapses have attracted increasing attention because the atomic thickness could be easil...

Unipolar fields produced by ultrafast optical gating of terahertz pulses

S. D. Gorelov, A. L. Novokovskaya, S. B. Bodrov et al. Jan 06, 2025 10.1063/5.0243002

Unipolar (sub-cycle) electromagnetic fields are a subject of current interest as a possible useful tool for light–matter interaction studies and applications. We propose, numerically simulate, and exp...

Low-pressure CVD grown Si-doped β-Ga2O3 films with promising electron mobilities and high growth rates

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta et al. Jan 06, 2025 10.1063/5.0245559

In this work, we systematically investigated the growth of Si-doped β-Ga2O3 films using low-pressure chemical vapor deposition (LPCVD) system, achieving high room-temperature Hall mobilities of 162 an...

Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization

Boyu Zuo, Xuhui Lou, Yu Chen et al. Jan 06, 2025 10.1063/5.0238011

The pulse-based rapid domain structure switching method in ferroelectric memristors has stability and other issues, limiting its applications. In this study, we perform atomic simulations to investiga...

Two-color strong-field terahertz amplification in the non-identical focusing condition

Jingjing Zhao, Yizhu Zhang, Yanjun Gao et al. Jan 06, 2025 10.1063/5.0246226

High optical-to-terahertz (THz) conversion efficiency is crucial for generating THz waves. Strong-field ionization using a bi-focal bi-chromatic geometry produces cascading plasmas, leading to amplifi...

Modulating single molecular electron sources with light: Opportunities and challenges

Hirofumi Yanagisawa Jan 06, 2025 10.1063/5.0235399

Applying a strong, constant electric field at single-C60 molecule protrusions formed on a metallic substrate can cause electrons to be emitted from individual single molecules into a vacuum. The shape...

Temperature characteristics of a photoinduced blackbody in intense light fields

Hao Cui, Weiping Qin Jan 06, 2025 10.1063/5.0245716

A “whitebody” can transform into a “blackbody” under intense light exposure, and the temperature of photoinduced blackbodies deviates significantly from Planck's law. This discovery necessitates the c...

Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures

Hongjing Chen, Yuntong Xing, Xia Wang et al. Jan 06, 2025 10.1063/5.0235511

Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate...

Multihyperuniformity in high-entropy MXenes

Yu Liu, Mohan Chen Jan 06, 2025 10.1063/5.0246719

MXenes are a large family of two-dimensional transition metal carbides and nitrides that possess excellent electrical conductivity, high volumetric capacitance, great mechanical properties, and hydrop...

Overlap-scanning self-referencing diffractive imaging with enlarged field of view under incoherent illumination

Hairui Sun, Zhuoyi Wang, Yiqin Ouyang et al. Jan 06, 2025 10.1063/5.0240404

Coherent diffractive imaging (CDI), especially the ptychography, has been widely used in quantitative phase imaging. However, in traditional diffractive imaging schemes, a highly coherent light source...

Dynamic domain motion enhancing electro-optic performance in ferroelectric films

Shinya Kondo, Kazuki Okamoto, Osami Sakata et al. Jan 06, 2025 10.1063/5.0244707

With the rapid advancement of information technology, there is a pressing need to develop ultracompact and energy-efficient thin-film-based electro-optic (EO) devices. A high EO coefficient in ferroel...

4780 nm ultra-broadband entangled biphotons from a chirped PPLN

Wen-Xin Zhu, Rui-Bo Jin Jan 06, 2025 10.1063/5.0237968

Ultra-broadband frequency entangled biphotons have exceptionally short temporal duration and can achieve narrow Hong–Ou–Mandel (HOM) interference patterns, making them vital for quantum metrology appl...

A circuit simulation model for resistive random-access memory devices based on CsBi3I10 perovskite thin films

Guoshu Dai, Haodong Lu, Xiaomei Chen et al. Jan 06, 2025 10.1063/5.0233930

This article proposes a circuit simulation model that can simulate the electrical behaviors of resistive random-access memory (RRAM) devices based on CsBi3I10 perovskite active layer. The CsBi3I10 per...

Mechanism of voltage frequency influence on vibration and discharge characteristics of water droplet attached to electrode

Yuxin Liu, Bo Zhang, Jinliang He Jan 06, 2025 10.1063/5.0245822

The vibration and discharge phenomena of droplets in electric fields are the focus of various applications, while the relationship between them has not been fully investigated. In this study, a synchr...

Method to avoid crosstalk for induced flow acceleration in multi-stage dielectric barrier discharge plasma actuators

Yoshinobu Nakamura, Takayasu Fujino, Takehiko Segawa Jan 06, 2025 10.1063/5.0245011

Dielectric barrier discharge plasma actuators are flow control devices that can actively induce a flow using electrohydrodynamic force. This Letter proposes a configuration of multi-stage dielectric b...

Coexistence of multiple electronic and phononic nodal lines in a two-dimensional macroporous carbon material

Weixiang Kong, Juan Wei, Xiaoliang Xiao et al. Jan 06, 2025 10.1063/5.0245025

Investigations into topological materials typically emphasize either electronic or phononic properties in isolation, often disregarding their coexistence, which could restrict the full realization of...

6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

Hiroshi Ohta, Yoshinobu Narita, Shota Kaneki et al. Jan 06, 2025 10.1063/5.0242225

A high breakdown voltage was achieved for a p–n junction diode grown by a hybrid epitaxial growth. Using a quartz-free hydride vapor-phase epitaxy, a thick and extremely high-purity n−-GaN drift layer...

Defect-engineered electrical and optoelectronic properties of WS2 irradiated with 10 MeV protons

Donggyu Lee, Seung Jae Kwak, Joonyup Bae et al. Jan 06, 2025 10.1063/5.0248810

Transition metal dichalcogenides (TMDs), particularly tungsten disulfide (WS2), have gained considerable attention due to their versatile electrical and optoelectronic properties, making them promisin...

Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co3O4/p-Si memristor

Indranil Maity, Richa Bharti, A. K. Mukherjee et al. Jan 06, 2025 10.1063/5.0235922

In this work, brain-like experiential learning/forgetting ability is demonstrated with the help of various synaptic adaptation rules, namely, short-term potentiation/short-term depression, long-term p...

High-efficiency perovskite light-emitting diodes enabled by introducing a LiF modification layer

Xulan Xue, Zhibo Zhao, Huidan Zhang et al. Jan 06, 2025 10.1063/5.0239423

Surface defect passivation and exciton regulation remain a critical challenge in perovskite light-emitting diodes (PeLEDs). Organic molecules are widely used to solve these issues. However, the high s...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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