Dielectric reliability and interface trap characterization in MOCVD grown <i>in situ</i> Al2O3 on β-Ga2O3
Abstract
In this article, we investigate the in situ growth of Al2O3 on β-Ga2O3 using metal-organic chemical vapor deposition at a high temperature of 800 °C. The Al2O3 is grown within the same reactor as the β-Ga2O3, employing trimethylaluminum and O2 as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance–voltage (C–V) and photo-assisted C–V methods. The high-temperature deposited dielectric demonstrates an impressive catastrophic breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown measurements. By modifying the dielectric deposition process to include a high-temperature (800 °C) thin interfacial layer and a low-temperature (600 °C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a catastrophic breakdown field of 7.8 MV/cm.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (4)
Saurav Roy
Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,
Arkka Bhattacharyya
Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,
Carl Peterson
Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,
Sriram Krishnamoorthy
Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,