Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (&amp;gt;4.3
 μ
 m/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett.
 125
 , 242106 (2024)]

Dong Su Yu; Lingyu Meng; Hongping Zhao

doi:10.1063/5.0253537

Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (&gt;4.3 μ m/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. 125 , 242106 (2024)]

D Dong Su Yu (Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,) L Lingyu Meng (Peking-Tsinghua Center for Life Sciences, Academy for Advanced Interdisciplinary Studies, Peking University) H Hongping Zhao

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 126, Issue 1

Published January 06, 2025

DOI 10.1063/5.0253537

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (3)

D

Dong Su Yu

Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,

L

Lingyu Meng

Peking-Tsinghua Center for Life Sciences, Academy for Advanced Interdisciplinary Studies, Peking University

H

Hongping Zhao

Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (&gt;4.3 <i>μ</i> m/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. <b>125</b> , 242106 (2024)]

Article Details

Journal Info

Authors (3)

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Journal Info

Authors (3)

Related Articles from this Journal

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Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (>4.3 <i>μ</i> m/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. <b>125</b> , 242106 (2024)]