Applied Physics Letters

Ferromagnetic permalloy/<i>p</i>-type boron-doped diamond Schottky barrier diodes

M Makoto Kawano (NTT Basic Research Laboratories, NTT Corporation , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,) C Carlos Cunha (NTT Basic Research Laboratories, NTT Corporation , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,) K Kazuyuki Hirama (Basic Research Laboratories, NTT Inc. , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,) K Kazuhide Kumakura (NTT Basic Research Laboratories, NTT Corporation, Atsugi , Kanagawa 243-0198,) Y Yoshitaka Taniyasu (Basic Research Laboratories, NTT Inc. , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,)

Abstract

Ferromagnetic permalloy/p-type boron (B)-doped diamond Schottky barrier diodes (SBDs) were demonstrated. The SBDs showed a clear rectifying behavior with a high on/off ratio of over 109 and an ideality factor close to unity at 300 K. The Schottky barrier height was 2.07 eV at the permalloy/B-doped diamond interface. The permalloy Schottky electrodes did not intermix with B-doped diamond and had almost the same magnetic properties as bulk permalloy.

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Article Details

Volume / Issue Vol. 126, Issue 1
Published January 06, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (5)

M

Makoto Kawano

NTT Basic Research Laboratories, NTT Corporation , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,

C

Carlos Cunha

NTT Basic Research Laboratories, NTT Corporation , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,

K

Kazuyuki Hirama

Basic Research Laboratories, NTT Inc. , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,

K

Kazuhide Kumakura

NTT Basic Research Laboratories, NTT Corporation, Atsugi , Kanagawa 243-0198,

Y

Yoshitaka Taniyasu

Basic Research Laboratories, NTT Inc. , 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198,

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