Rb 2 Ti 2 O 5 : A layered ionic conductor at the sub-micrometer scale

V Valerio Digiorgio K Karen Sobnath (Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162 1 , 75013 Paris,) M Maria Luisa Della Rocca C Clément Barraud (Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162 1 , 75013 Paris,) R Rémi Federicci (Pioniq Technologies 2 , 6 rue Jean Calvin, 75005 Paris,) A Armel Descamps-Mandine (LPEM-ESPCI Paris, PSL Research University, CNRS, Sorbonne Université 3 , 10 rue Vauquelin, 75005 Paris,) B Brigitte Leridon (Pioniq Technologies 2 , 6 rue Jean Calvin, 75005 Paris,)

Abstract

Over the past few years, ionic conductors have gained a lot of attention because of the possibility of implementing them in various applications such as supercapacitors, batteries or fuel cells, and resistive memories. Especially, layered two-dimensional (2D) crystals, such as h-BN, graphene oxide, and MoSe2, have been shown to provide unique properties originating from the specific 2D confinement of moving ions. Two important parameters are the ion conductivity and the chemical stability over a wide range of operating conditions. In this vein, Rb2Ti2O5 (RTO) has recently been found displaying remarkable properties such as superionic conduction and equivalent colossal dielectric constant. Here, an approach to the study of the electrical properties of the layered RTO 100-nm scale is presented. Characterizations by means of micro-Raman spectroscopy and atomic force microscopy measurements of mechanically exfoliated RTO micro-flakes via the so-called adhesive-tape technique are reported. Finally, the results of electrical measurements performed on an exfoliated RTO micro-flake are presented and are found to be consistent with the results obtained on macroscopic bulk crystals.

Article Details

Volume / Issue Vol. 126, Issue 1
Published January 06, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

V

Valerio Digiorgio

K

Karen Sobnath

Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162 1 , 75013 Paris,

M

Maria Luisa Della Rocca

C

Clément Barraud

Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162 1 , 75013 Paris,

R

Rémi Federicci

Pioniq Technologies 2 , 6 rue Jean Calvin, 75005 Paris,

A

Armel Descamps-Mandine

LPEM-ESPCI Paris, PSL Research University, CNRS, Sorbonne Université 3 , 10 rue Vauquelin, 75005 Paris,

B

Brigitte Leridon

Pioniq Technologies 2 , 6 rue Jean Calvin, 75005 Paris,