Applied Physics Letters
Articles in this Issue
3 kV fully vertical <i>β</i>-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN
In this work, we present the fabrication of a fully vertical β-Ga2O3 Schottky barrier diode with junction termination extension (JTE-SBD) utilizing a p-GaN layer produced by sputtering, offering a sol...
Characterization and reduction of RF loss up to 110 GHz by optimizing the UID-GaN layer in N-polar GaN material
In this work, the mechanism of RF loss up to 110 GHz for N-polar GaN has been studied. With the assistance of S-parameter characterization combined with secondary ion mass spectroscopy analyses, the i...
Spin wave propagation in YIG waveguides with magnetic microvolcanoes: Experiment and simulation
Control of spin wave transport in polymer 3D films was realized by magnetic microvolcanoes embedded in waveguides, fabricated by soft-matter specific techniques. Propagate of the spin wave signal exci...
Topographically selective atomic layer deposition within trenches enabled by an amorphous carbon inhibition layer
To meet the demands for more advanced computer chips, creating devices with advanced 3D architectures is becoming commonplace in the semiconductor industry. To ensure alignment between the different l...
Anisotropic phonon responses of 2D NbOX2 (X<b>=</b>Cl, Br, I) under uniaxial tensile strain
The van der Waals crystal NbOX2 (X = Cl, Br, I) has recently attracted much attention due to its remarkable in-plane anisotropy and substantial second-order nonlinear optical response. Moreover, the i...
Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors
In this paper, we address correlations between film thickness, phase composition, and oxygen vacancy (VO) distribution in scaled, hafnia-based ferroelectric capacitors (FeCAPs), necessary to achieve l...
Li-ion storage characteristics and migration mechanisms of intrinsic, doped, and oxygen-deficient CeO2 and La2O3: A study using DFT+<i>U</i>
Rare-earth oxides (REOs) represented by CeO2 and La2O3 became a focal point in the study of Li-ion battery (LIB) electrode materials. However, leveraging defects to tune the intrinsic electronic struc...
Polarization-insensitive microwave power receiving composite array based on reflection phase gradient metasurfaces
This paper presents a polarization-insensitive microwave power receiving composite metasurface array. The composite array consists of a reflection phase gradient metasurface array and a horizontal omn...
Resonant-type multifunctional device using organic piezoelectrics for detecting differential pressure and acceleration
In this study, a multifunctional device was developed using the organic piezoelectric material polyvinylidene fluoride (PVDF) to detect mechanical operations. This device utilizes a mechanism in which...
High thermal durability and thermoelectric performance with ultra-low thermal conductivity in <i>n</i>-type single-walled carbon nanotube films by controlling dopant concentration with cationic surfactant
Single-walled carbon nanotubes (SWCNTs) are promising candidates for use in thermoelectric generators (TEGs) to power Internet of Things (IoT) sensors. For practical applications, the major challenge...
The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method
In this Letter, we demonstrate the application of Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS (L-DLTS) techniques to unintentionally doped β-Ga2O3 crystals grown by the Czochralski metho...
Ferroelectric tunnel junction based on Zr0.75Hf0.25O2/Al2O3 composite barrier
Ferroelectric tunnel junction (FTJ) with tunable tunnel electroresistance is promising for emerging nonvolatile memory applications. In this work, 6 nm-thick Hf-doped ZrO2 ferroelectrics with Zr : Hf ...
Oxygen impurities in AlN and their impact on optical absorption
Oxygen is a common impurity in AlN samples. Using hybrid density functional calculations, we investigate the role of substitutional oxygen (ON) in the optical absorption. We construct configuration co...
Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs
This work reports the impact of gamma-ray (γ-ray) irradiation-induced degradation based on the trap behaviors in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. By employing multip...
Direct measurement of thermal Knudsen forces in rarefied gas environments
At micro- and nanoscales, momentum transfer between surfaces is influenced by various physical mechanisms, including quantum fluctuations, electromagnetic interactions, electric charges, and the dynam...
Enhanced near-infrared photoresponse of SnS2 nanosheets by Er–Yb co-doping
Rare earth (RE) ions are important dopants to modulate semiconductor properties because of their abundant energy levels. Herein, a simple Er–Yb co-doping strategy was developed to enhance the near-inf...
All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates
In this work, we report on the fabrication of all-implanted β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) devices on semi-insulating (-201) β-Ga2O3 substrates. Through the use of...
Terahertz near-zero reflection modulator based on cascaded electrical length reconfiguration
Return loss is a core indicator of module connectivity performance in integrated communication systems. Reflections from the modulation device can cause power fluctuations, leading to excessive amplit...
Enhanced stability and mobility of aligned In2O3 nanofiber field-effect transistors with Y2O3 passivation
Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typical...
Anti-irradiation reinforcement in NiFe/oxide composite structure by electronic reconstruction and structural stabilization for efficient magnetoresistive sensor in aerospace/radiotherapy applications
The construction of irradiation-tolerant anisotropic magnetoresistance (AMR) sensors is crucial for weak-field detection in scenarios of aerospace and radiotherapy. Presently, the utilization of the N...
Giant persistent photoconductivity at room temperature in Sn-based perovskites
Long avoided due to adverse effects in traditional optoelectronic devices, persistent photoconductivity (PPC) is now sought-after for emerging technologies, including artificial synapses and coupled s...
A controllable doping method for Ga2O3 film construction and optimized density for high-performance photodetectors
Gallium oxide (Ga2O3), a wide bandgap semiconductor, has been extensively studied for its potential applications in deep ultraviolet photodetectors and next-generation power electronic devices. To enh...
Construction of oriented Zn (002) facets via 3D conductive frameworks for enhanced performance in fiber-based zinc-ion batteries
Zinc-ion batteries (ZIBs) are poised to play a pivotal role in the future energy storage market. However, the undesired growth of zinc dendrites and the prevalence of side reactions pose significant c...
ZnO/Cu2S PN-junctions with built-in electric field for enhanced CO2 electroreduction
A full stack strategy, including facilitating the capture of CO2 molecules on catalysts, regulating intermediates, and releasing products, is highly needed to break the bottleneck for CO2 electroreduc...
Designing the weak Fermi pinning and p-type Ohmic contacts to monolayer halide perovskite Cs3Bi2I9
The contact between two-dimensional (2D) perovskite and metal electrodes is often plagued by strong Fermi-level pinning (FLP) effects, which limit the electronic performance of devices. By utilizing v...