Terahertz near-zero reflection modulator based on cascaded electrical length reconfiguration

C Chunyang Bi (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) S Sen Gong (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) K Kesen Ding (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) L Liyu Cheng (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) H Huajie Liang (Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China 4 , Huzhou 313001,) H Hongxin Zeng (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) L Lan Wang S Shixiong Liang Z Ziqiang Yang (Center for High Pressure Science and Technology Advanced Research) Y Yaxin Zhang (Key Laboratory of Analytical Science and Technology of Hebei Province, Hebei Research Center of the Basic Discipline of Synthetic Chemistry, College of Chemistry and Materials Science)

Abstract

Return loss is a core indicator of module connectivity performance in integrated communication systems. Reflections from the modulation device can cause power fluctuations, leading to excessive amplitude noise affecting the system's signal-to-noise ratio. To solve the problem of high return loss in existing terahertz amplitude modulation techniques, this paper proposes a near-zero reflection terahertz modulator based on an electrical length reconfiguration cascade. The ON-OFF effect of the modulator is achieved through the cascade's electrical length reconstruction, and the reflections are effectively suppressed from the ON state to the OFF state. Experimental results demonstrate that the proposed modulator achieves a broadband low-reflection effect in the 170–260 GHz band, with a Voltage Standing Wave Ratio (VSWR) of less than 1.5 over a bandwidth of 60 GHz and an optimal VSWR of 1.1. It has the potential to support high-speed response as well as the large-capacity, high-rate data transmission. Accordingly, the proposed modulator offers a promising solution for the design of high-performance terahertz modulators and multi-channel integrated terahertz communication systems.

Article Details

Volume / Issue Vol. 126, Issue 6
Published February 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

C

Chunyang Bi

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

S

Sen Gong

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

K

Kesen Ding

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

L

Liyu Cheng

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

H

Huajie Liang

Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China 4 , Huzhou 313001,

H

Hongxin Zeng

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

L

Lan Wang

S

Shixiong Liang

Z

Ziqiang Yang

Center for High Pressure Science and Technology Advanced Research

Y

Yaxin Zhang

Key Laboratory of Analytical Science and Technology of Hebei Province, Hebei Research Center of the Basic Discipline of Synthetic Chemistry, College of Chemistry and Materials Science