3 kV fully vertical <i>β</i>-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN
Abstract
In this work, we present the fabrication of a fully vertical β-Ga2O3 Schottky barrier diode with junction termination extension (JTE-SBD) utilizing a p-GaN layer produced by sputtering, offering a solution to the absence of p-Ga2O3 materials. The p-GaN/n-Ga2O3 JTE-SBD demonstrates a turn-on voltage (Von) of 0.8 V, a specific on-resistance (Ron,sp) of 6.15 mΩ·cm2, an ideality factor (n) of 1.24, a breakdown voltage of 3 kV, and a Baliga's Figure of Merit of 1.46 GW/cm2. The current–voltage–temperature (I–V–T) testing has confirmed a transition in the dominant leakage mechanisms from the Poole–Frenkel mechanism to variable-range hopping.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (18)
Qingyuan Chang
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University , Xi'an 710071,
Bin Hou
Ling Yang
Mao Jia
National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University 1 , Xi'an 710126,
Youjun Zhu
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University 1 , Xi'an 710071,
Mei Wu
Meng Zhang
Qing Zhu
Hao Lu
State Key Laboratory of Macromolecular Drugs and Large-scale Preparation, School of Pharmaceutical Sciences
Jiarui Xu
Chunzhou Shi
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University , Xi'an 710071,
Jiale Du
Department of Molecular Machines and Signaling, Max Planck Institute of Biochemistry
Qian Yu
Mengdi Li
Xu Zou
Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, Electron Microscopy Center, International Center of Future Science, Changbaishan Laboratory Jilin University Changchun 130012 China
Haolun Sun
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University 1 , Xi'an 710071,
Xiaohua Ma
Yue Hao