Applied Physics Letters

Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs

H Hongseung Lee (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) J Jaewook Yoo (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) H Hyeonjun Song (Department of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) B Binhyeong Lee (Division of Advanced Materials Engineering, Jeonbuk National University 2 , Jeonju 54896,) S Soon Joo Yoon (Division of Advanced Materials Engineering, Jeonbuk National University 2 , Jeonju 54896,) S Seongbin Lim (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) J Jo Hak Jeong (Department of Semiconductor Science & Technology, Jeonbuk National University 3 , Jeonju 54896,) S Soyeon Kim M Minah Park (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) S Seohyeon Park (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) S Sojin Jung (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) B Bhishma Pandit (School of Semiconductor and Chemical Engineering, Jeonbuk National University 1 , Jeonju 54896,) T Taehwan Moon (Department of Electrical and Computer Engineering, Ajou University 4 , Suwon 16499,) J Jin-Ha Hwang K Kiyoung Lee Y Yoon Kyeung Lee (Division of Advanced Materials Engineering, Jeonbuk National University 2 , Jeonju 54896,) K Keun Heo (Department of Semiconductor Science & Technology, Jeonbuk National University 3 , Jeonju 54896,) H Hagyoul Bae (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,)

Abstract

This work reports the impact of gamma-ray (γ-ray) irradiation-induced degradation based on the trap behaviors in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. By employing multiple measurement configurations via low-frequency noise and direct current I–V characterization, we quantitatively investigated the energetic distribution of subgap density-of-states in the a-IGZO channel and the spatial distribution of oxide traps (Not) in the gate insulator, respectively. Also, the qualitative analysis was performed to determine the oxygen-related defects after γ-ray irradiation using x-ray photoelectron spectroscopy. Furthermore, the validity of our results was additionally confirmed by measuring the breakdown voltage and applying positive-bias stress to the fabricated devices exposed to radiation for accelerated tests.

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Article Details

Volume / Issue Vol. 126, Issue 6
Published February 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (18)

H

Hongseung Lee

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

J

Jaewook Yoo

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

H

Hyeonjun Song

Department of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

B

Binhyeong Lee

Division of Advanced Materials Engineering, Jeonbuk National University 2 , Jeonju 54896,

S

Soon Joo Yoon

Division of Advanced Materials Engineering, Jeonbuk National University 2 , Jeonju 54896,

S

Seongbin Lim

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

J

Jo Hak Jeong

Department of Semiconductor Science & Technology, Jeonbuk National University 3 , Jeonju 54896,

S

Soyeon Kim

M

Minah Park

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

S

Seohyeon Park

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

S

Sojin Jung

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

B

Bhishma Pandit

School of Semiconductor and Chemical Engineering, Jeonbuk National University 1 , Jeonju 54896,

T

Taehwan Moon

Department of Electrical and Computer Engineering, Ajou University 4 , Suwon 16499,

J

Jin-Ha Hwang

K

Kiyoung Lee

Y

Yoon Kyeung Lee

Division of Advanced Materials Engineering, Jeonbuk National University 2 , Jeonju 54896,

K

Keun Heo

Department of Semiconductor Science & Technology, Jeonbuk National University 3 , Jeonju 54896,

H

Hagyoul Bae

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

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