Anti-irradiation reinforcement in NiFe/oxide composite structure by electronic reconstruction and structural stabilization for efficient magnetoresistive sensor in aerospace/radiotherapy applications

R Ronggui Zhu (Department of Materials Physics and Chemistry, University of Science and Technology Beijing 1 , Beijing 100083,) T Tong Guo L Lei Ding F Fei Meng (The Fifth Engineering Co., Ltd. of China Railway Seventh Group) B Boyi Wang Y Yu Qi X Xutong Meng (School of Materials Science and Engineering, University of Science and Technology Beijing 1 , Beijing 100083,) B Baohe Li (Department of Physics, School of Sciences, Beijing Technology and Business University 3 , Beijing 100048,) C Chun Feng G Guanghua Yu (Innovation Center for Chemical Science College of Chemistry Chemical Engineering and Materials Science Soochow University Suzhou 215006 China)

Abstract

The construction of irradiation-tolerant anisotropic magnetoresistance (AMR) sensors is crucial for weak-field detection in scenarios of aerospace and radiotherapy. Presently, the utilization of the NiFe/oxide composite structure was considered to be an effective scheme to optimize the spin-dependent transport property; however, it exhibited poor anti-irradiation ability due to the crystal instability of oxide. Here, a strategy was proposed to break through the limitation based on the electronic reconstruction and structural stabilization. By introducing an oxygen-affinitive Hf intercalation into the Ta/MgO/NiFe/MgO/Ta multilayer, the electron coordination was modified to tune the 3d orbital occupancy of Fe, apparently boosting the s-d electron scattering and spin-related transport property. Meanwhile, the irradiation stability of electronic and crystal structures was effectively improved due to the emergence of the Hf–O–Mg bond with high dissociation energy. Therefore, we constructed a highly reliable AMR sensor with both the ultrahigh sensitivity of 3.1 mV/V/Oe and excellent irradiation-tolerant ability capable of resisting the γ-ray irradiation of 1000 Gy. These results not only build an important basis for the sensor application in the irradiation environment but also provide a possible idea for the anti-irradiation design in spintronic devices.

Article Details

Volume / Issue Vol. 126, Issue 6
Published February 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

R

Ronggui Zhu

Department of Materials Physics and Chemistry, University of Science and Technology Beijing 1 , Beijing 100083,

T

Tong Guo

L

Lei Ding

F

Fei Meng

The Fifth Engineering Co., Ltd. of China Railway Seventh Group

B

Boyi Wang

Y

Yu Qi

X

Xutong Meng

School of Materials Science and Engineering, University of Science and Technology Beijing 1 , Beijing 100083,

B

Baohe Li

Department of Physics, School of Sciences, Beijing Technology and Business University 3 , Beijing 100048,

C

Chun Feng

G

Guanghua Yu

Innovation Center for Chemical Science College of Chemistry Chemical Engineering and Materials Science Soochow University Suzhou 215006 China