Amorphous In2O3 FeFET-like devices by interface dipoles
Abstract
Counterclockwise (CCW) hysteresis with a memory window (MW) of 2.4 V is observed in amorphous indium oxide (a-In2O3) thin-film transistors with silicon oxide (SiOX) gate insulator (40 nm). This CCW phenomenon is due to the dipole formation between the a-In2O3 channel and the SiOX gate insulator by relocating oxygen atoms under the influence of the applied electric field. Hence, bipolar switching of gate bias (VGS) alters the dipole direction and leads to low (VTL) and high (VTH) threshold voltages. The dipole formation increases with the electric field, which can be tailored by gate oxide (SiOX) thickness or gate bias (VGS). Therefore, the devices with a gate oxide thickness of 200 nm initially showed the clockwise hysteresis at VGS of 2 V, transformed to the CCW (MW of 4.2 V) with an increase in gate bias to 14 V. Therefore, a difference in oxygen density at the interface can form a dipole to exhibit the CCW phenomenon and behave FeFET-like.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Rachit Dobhal
Graduate School of Advanced Technology, National Taiwan University 3 , Taipei 10617,
Yuan-Ming Liu
Graduate Institute of Photonics and Optoelectronics, National Taiwan University 2 , Taipei 10617,
Jih-Chao Chiu
Graduate Institute of Electronics Engineering, National Taiwan University 1 , Taipei 10617,
Hsien-Ming Sung
Graduate Institute of Electronics Engineering, National Taiwan University 1 , Taipei 10617,
Yu-Shan Wu
Graduate Institute of Electronics Engineering, National Taiwan University 3 , Taipei 10617,
Yu-Cheng Fan
Graduate Institute of Photonics and Optoelectronics, National Taiwan University 2 , Taipei 10617,
Johannes Gracia
Graduate School of Advanced Technology, National Taiwan University 1 , Taipei 10617,
Rong-Wei Ma
Graduate Institute of Photonics and Optoelectronics, National Taiwan University 2 , Taipei 10617,
Hidenari Fujiwara
Graduate Institute of Electronics Engineering, National Taiwan University 3 , Taipei 10617,
C. W. Liu
Department of Chemistry