High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering
Abstract
In this paper, we report a high endurance and low coercive voltage (Vc) ferroelectric tunnel junction (FTJ) device by replacing the TiN top electrode with W electrode after annealing. This method implants a TiNOx thin layer, which reduces leakage current and increases breakdown voltage (Vbd), leading to better device endurance. It can also effectively promote the formation of orthogonal phase and inhibit tetragonal phase during the wake-up process, which contributes to reducing Vc. Therefore, the proposed 5 nm H0.5Z0.5O2 (HZO) FTJ exhibits excellent performances, such as low Vc (0.49 V), small Vc/Vbd ratio (19.1%), high endurance (>1011), and high double remanent polarization (2Pr = 41 μC/cm2), which are the frontier of the reported HfO2-based FTJ. The results strongly indicate that the FTJ has high potential in addressing the frequent weight changes generated by brain-like computational training and learning.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Yefan Zhang
The College of Electronic Science and Technology, National University of Defense Technology 1 , Changsha 410073,
Xiaopeng Luo
The College of Electronic Science and Technology, National University of Defense Technology 1 , Changsha 410073,
Xiao Long
Peng Yang
Shihao Yu
The College of Electronic Science and Technology, National University of Defense Technology 1 , Changsha 410073,
Yang Liu
Zihao Hou
The College of Electronic Science and Technology, National University of Defense Technology 1 , Changsha 410073,
Wei Wu
Sen Liu
Zhiwei Li
Yi Sun
Qingjiang Li