Enhanced thermoelectric performance by Hf substitution in p-type half-Heusler TiNi0.8Co0.2Sn

M Masashi Mikami (National Institute of Advanced Industrial Science and Technology 1 , Nagoya 463-8560,) H Hidetoshi Miyazaki (Nagoya Institute of Technology 2 , Nagoya 466-8555,) Y Yoichi Nishino (Nagoya Institute of Technology 2 , Nagoya 466-8555,)

Abstract

The half-Heusler TiNiSn alloy is a promising candidate for thermoelectric power generation, capable of directly converting waste heat into electric power, due to its high thermoelectric performance over a wide temperature range from 500 to 1000 K. However, the thermoelectric performance of p-type TiNiSn is much lower than that of its n-type counterpart. Here, we demonstrate that Hf substitution in the p-type half-Heusler TiNi0.8Co0.2Sn alloy significantly enhances thermoelectric performance within the miscibility gap region of the binary TiNiSn-HfNiSn phase diagram. The Seebeck coefficient, which is below 80 μV/K for TiNi0.8Co0.2Sn, is substantially improved to 170 μV/K in Ti0.5Hf0.5Ni0.8Co0.2Sn at 650 K, owing to modifications in the electronic band structure induced by Hf substitution. Moreover, the lattice distortion and point defects introduced by Hf substitution effectively reduce thermal conductivity, from 5.0 W/mK for TiNi0.8Co0.2Sn to 3.3 W/mK for Ti0.5Hf0.5Ni0.8Co0.2Sn at 900 K. Consequently, the thermoelectric figure of merit (ZT) significantly increases from 0.03 for TiNi0.8Co0.2Sn to 0.26 for Ti0.5Hf0.5Ni0.8Co0.2Sn at 800 K. This enhancement of thermoelectric performance in p-type TiNiSn enables the construction of thermoelectric modules composed solely of half-Heusler TiNiSn based alloys, which are expected to exhibit high thermal stability useful for long-term thermoelectric power generation.

Article Details

Volume / Issue Vol. 126, Issue 13
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (3)

M

Masashi Mikami

National Institute of Advanced Industrial Science and Technology 1 , Nagoya 463-8560,

H

Hidetoshi Miyazaki

Nagoya Institute of Technology 2 , Nagoya 466-8555,

Y

Yoichi Nishino

Nagoya Institute of Technology 2 , Nagoya 466-8555,