<b> <i>π</i> </b>/2-periodic planar Hall effect in MnGe thin films
Abstract
The planar Hall effect (PHE) offers notable advantages in spintronic applications, particularly because of its high signal-to-noise ratio and minimal thermal drift. In this study, we present a tunable PHE in MnGe (111)/Si (111) thin films. Typically, PHE demonstrates π-periodicity as the magnetic field rotates within the plane. Interestingly, we observed that in MnGe thin films, both π- and π/2-periodicities coexist. The emergence of π/2 periodicity is closely linked to specific features observed in the M–H curves. Magnetic force microscopy data reveal that the two periodic PHE signals correspond to distinct, spatially separated magnetic domains. These findings enhance our understanding of magnetic interactions within MnGe films and suggest their potential applicability in spintronic and magnetic sensor technologies.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Zhaohang Li
CAS Key Laboratory of Strongly Couple Quantum Matter Physics, Department of Physics and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 1 , Hefei, Anhui 230026,
Fanbao Meng
Kesen Zhao
Xiangyu Hua
CAS Key Laboratory of Strongly Couple Quantum Matter Physics, Department of Physics and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 1 , Hefei, Anhui 230026,
Zongyao Huang
CAS Key Laboratory of Strongly Couple Quantum Matter Physics, Department of Physics and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 1 , Hefei, Anhui 230026,
Feixiong Quan
CAS Key Laboratory of Strongly Couple Quantum Matter Physics, Department of Physics and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 1 , Hefei, Anhui 230026,
Hua Ge
Ziji Xiang
Tao Wu
Wenjie Meng
Yubin Hou
Qingyou Lu
Xianhui Chen
Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics