Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study
Abstract
The metal–semiconductor contact resistivity has become a severe challenge for three-dimensional (3D) integration. In this work, starting from the physical origin, we propose that the charge redistribution is an effective strategy for decreasing Schottky barrier height (SBH), subsequently leading to a reduction in contact resistivity. Guided by this perspective, first-principles calculations are utilized to investigate the effect of a series of metal dopants on the SBH in the NiSi/Si system. The ΦBe values of NiSi/Si can be reduced to 0.27, 0.28, and 0.22 eV in Sc, Ti, and Zr doped systems, respectively. Especially for the Zr dopant, it can achieve ultra-low contact resistivity of 2.30 × 10−9 Ω cm2, which can be ascribed to the dominant charge redistribution effect. In contrast, high electronegativity dopants like Au and Ir increase ΦBe. Dopant diffusion and concentration effects are also examined, demonstrating the feasibility of this approach. This work provides a useful theoretical guidance in reducing contact resistivity for 3D integration.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (16)
Miaojia Yuan
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Maokun Wu
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Yichen Wen
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Yilin Hu
Department of Molecular Biology and Biochemistry University of California Irvine California USA
Xuepei Wang
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Boyao Cui
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Jinhao Liu
Yishan Wu
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Hong Dong
Feng Lu
Department of Medical Oncology, Dana-Farber Cancer Institute
Wei-Hua Wang
Pengpeng Ren
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Sheng Ye
School of Artificial Intelligence
Hongliang Lu
Intelligent Transportation Thrust, Systems Hub
Runsheng Wang
Zhigang Ji
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,