Superconducting nanowire single-photon detectors based on amorphous tungsten germanide

S Shijie Yang (State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, School of Chemical Engineering) Y Ying Chen L Limin Sun (Instrumental Analysis Center) H Hui Zhou (Department of Chemistry and Materials) Y Yangmu Li (Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 5 , Beijing 100190,) J Jia Huang X Xiaoqing Zheng (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology 2 , 865 Changning Road, Shanghai 200050) R Ruoyan Ma (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology 2 , 865 Changning Road, Shanghai 200050) J Jiamin Xiong (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) Z Zhen Wan (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) X Xiaoyu Liu (Optogenetics & Synthetic Biology Interdisciplinary Research Center, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Pharmacy, East China University of Science and Technology, 130 Mei Long Road, Shanghai 200237, China) H Hao Li J Jihong Zheng (Department of Orthopedics and Precision Research Center for Refractory Diseases, Shanghai General Hospital, Shanghai Jiao Tong University School of Medicine) W Wei Peng (Andlinger Center for Energy and the Environment, Princeton University) X Xiaofu Zhang L Lixing You

Abstract

In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting properties comparable to those of amorphous WSi. The nanowire width ranges from 60 to 90 nm, with a fixed filling factor of 30%. All fabricated devices exhibit saturated intrinsic detection efficiency for infrared photons with wavelengths up to 2 μm, indicating that WGe is a promising candidate for SNSPDs designed for mid- and far-infrared photon detection. The timing jitter of these detectors, measured with a room-temperature amplifier, ranges from 127 to 234.5 ps. Further improvements can be achieved through device geometry optimization or the implementation of cryogenic amplifiers.

Article Details

Volume / Issue Vol. 126, Issue 16
Published April 21, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (16)

S

Shijie Yang

State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, School of Chemical Engineering

Y

Ying Chen

L

Limin Sun

Instrumental Analysis Center

H

Hui Zhou

Department of Chemistry and Materials

Y

Yangmu Li

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 5 , Beijing 100190,

J

Jia Huang

X

Xiaoqing Zheng

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology 2 , 865 Changning Road, Shanghai 200050

R

Ruoyan Ma

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology 2 , 865 Changning Road, Shanghai 200050

J

Jiamin Xiong

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

Z

Zhen Wan

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

X

Xiaoyu Liu

Optogenetics & Synthetic Biology Interdisciplinary Research Center, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Pharmacy, East China University of Science and Technology, 130 Mei Long Road, Shanghai 200237, China

H

Hao Li

J

Jihong Zheng

Department of Orthopedics and Precision Research Center for Refractory Diseases, Shanghai General Hospital, Shanghai Jiao Tong University School of Medicine

W

Wei Peng

Andlinger Center for Energy and the Environment, Princeton University

X

Xiaofu Zhang

L

Lixing You