Synergistic effects of strain and chemical environment on defect engineering in γ-CsPbI3

T Tao Luo Z Zhijuan Chen C Chunzhi Liu (Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University 1 , Baoding 071002,) J Jianen Zhang (Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University 1 , Baoding 071002,) T Tao Yin M Min Zhang X Xiaobo Chen X Xu Li L Li Guan (Department of Basic Medicine, School of Basic Medicine and Clinical Pharmacy, China Pharmaceutical University)

Abstract

Intrinsic point defects under lattice strain play a pivotal role in determining the optoelectronic performance of perovskite solar cells. Using the first-principles method, the effects of uniaxial and volumetric strain on the formation energies of common defects in γ-CsPbI3 were investigated. The results reveal that tensile strain enhances the formation energy of vacancy defects, including VI and VPb, while the larger volumetric compressive strain triggers the spontaneous generation of VPb and VCs. Pb–I–Pb bond angles and the tilt of PbI6 octahedra are closely correlated with the formation energy of defects. An increased octahedral tilt reduces the lattice symmetry, which in turn leads to a decrease in the defect formation energy. In an iodine-rich chemical environment commonly utilized in the perovskite synthesis, defects demonstrate diminished tolerance to strain, leading to a marked change in the formation energy at minimal strain levels. These findings provide a deeper understanding of uniaxial and volumetric strain on perovskites, demonstrating a strain-based strategy to improve the long-term stability and photovoltaic efficiency of perovskite solar cells.

Article Details

Volume / Issue Vol. 126, Issue 16
Published April 21, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

T

Tao Luo

Z

Zhijuan Chen

C

Chunzhi Liu

Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University 1 , Baoding 071002,

J

Jianen Zhang

Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University 1 , Baoding 071002,

T

Tao Yin

M

Min Zhang

X

Xiaobo Chen

X

Xu Li

L

Li Guan

Department of Basic Medicine, School of Basic Medicine and Clinical Pharmacy, China Pharmaceutical University