Applied Physics Letters

Vol. 126, Issue 22 Issue 22 2025
57
Articles

Articles in this Issue

Quantum anomalous Hall effect in two-dimensional ferromagnetic Mn2XSe4 (X = Al, Ga, In)

Xiaojing Yao, Jiahui Li, Jie Li et al. Jun 02, 2025 10.1063/5.0264468

As a topological phase with chiral edge states in the absence of a magnetic field, quantum anomalous Hall (QAH) insulators have become a booming topic in low-power-consumption electronic devices, and...

Scalable alloy-based sputtering of high-conductivity PdCoO2 for advanced interconnects

Takayuki Harada, Zuin Ping Lily Ang, Yuki Sakakibara et al. Jun 02, 2025 10.1063/5.0260219

As integrated circuits continue to scale down, the search for alternative metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered o...

Observation of quantized spin wave modes in nano-constriction spin Hall nano-oscillators

Jiayu Lei, Shishun Zhao, Raghav Sharma et al. Jun 02, 2025 10.1063/5.0251256

Standing spin waves are crucial for advancing high-frequency spintronic devices and have been investigated using excitation methods such as cavity-based approaches, antenna-based techniques, and optic...

Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator

Keyun Gu, Zilong Zhang, Jian Huang et al. Jun 02, 2025 10.1063/5.0274650

Diamond, with its ultra-wide bandgap energy, has emerged as an extreme semiconductor due to its extraordinary electronic and thermal properties. The hydrogen-terminated diamond surface has attracted e...

Wafer-scale fabrication of temperature-compensated alkali vapor cells

Yang Li, Marlou R. Slot, Matthew T. Hummon et al. Jun 02, 2025 10.1063/5.0264409

We demonstrate wafer-scale fabrication of temperature-compensated alkali vapor cells using a mixture of Ar and N2 buffer gases. The temperature coefficient of the fractional frequency shift of the hyp...

Resonant dynamics governed by interlayer frozen bubbles in h-BN/graphene heterostructures

YuChen Zhang, Qiang Liu, Yang Xiao et al. Jun 02, 2025 10.1063/5.0272385

The graphene–hexagonal boron nitride (h-BN) heterostructures represent a pivotal platform for the exploration of dynamic characteristics of nanoelectromechanical systems, unconventional quantum Hall e...

Turbulence-induced particle resonance before detachment from a flat surface

Zhikai You, Zhu Fang, Shuiqing Li et al. Jun 02, 2025 10.1063/5.0267665

Particle resuspension is a common phenomenon in nature and industries but not fully understood yet. In this work, we report direct experimental evidence for turbulence-induced resonance of wall-adhere...

Steering high-order perfect vector beams in coherent laser arrays for suppressive crosstalk optical links

Bowang Shu, Yuqiu Zhang, Zhongquan Nie et al. Jun 02, 2025 10.1063/5.0268663

Coherent beam combining (CBC) has offered an unparalleled approach in achieving high-capacity and high-bandwidth free-space optical (FSO) communication due to its versatile integration functionality a...

Mitigating carrier loss in photoelectrochemical photocathodes: An approach combining optical computation and experimental validation

Jialin Shao, Yujie Wang, Huiya Liu et al. Jun 02, 2025 10.1063/5.0273633

Metal oxide semiconductors hold significant promise for overcoming bottlenecks in optoelectronic devices, such as stability and power density limitations. However, their performance has been severely...

Joint first principles and experimental investigation on the improved performance of the Ta2O5 interface layer for an MoS2/WS2 channel

Benoit Van Troeye, Shao-Heng Yang, Hao-Yu Lan et al. Jun 02, 2025 10.1063/5.0266701

Transition metal dichalcogenides are attractive channel materials for an aggressive dimension scaling of double-gated field-effect transistors. Some challenges, however, remain nowadays, including fin...

MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio

Kazuki Nomoto, Isabel Streicher, Thai-Son Nguyen et al. Jun 02, 2025 10.1063/5.0257333

We report the realization and operation of AlYN/GaN high-electron-mobility transistors (HEMTs). Metal-organic chemical vapor deposition is used to deposit AlYN/GaN semiconductor heterostructures on 10...

Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation

Yu-Ting Chen, Ching-Hsueh Chiu, Lu-Hsun Chen et al. Jun 02, 2025 10.1063/5.0260325

GaN/AlGaN high electron mobility transistors (HEMTs) are important devices due to their high-frequency and high-power applications. The two-dimensional (2D) electron density in AlGaN/GaN heterostructu...

Semipolar (11 2¯ 2) AlN/AlGaN quasi-vertical Schottky barrier diodes grown on m-sapphire

Junxue Ran, Yijian Song, Jiankun Yang et al. Jun 02, 2025 10.1063/5.0269809

In this work, we demonstrate the semipolar (11 2¯ 2) AlN/AlGaN Schottky barrier diodes (SBDs) on m-plane sapphire by metal organic chemical vapor deposition. Owing to the combination of high quality u...

Origin of magnetic switching cascades in nanostructured Co3Fe tetrapods

Christian Schröder, Bereket Ghebretinsae, Martin Lonsky et al. Jun 02, 2025 10.1063/5.0254061

We present a comprehensive study of three-dimensional arrays of nanostructured Co3Fe tetrapods consisting of four pillars each with tetrahedral symmetry, prepared by focused electron beam-induced depo...

Editorial for the Special Topic: Advances in quantum metrology

Hans Werner Schumacher, Stefan Kück, Helen S Margolis et al. Jun 02, 2025 10.1063/5.0280635

Polarization-resolved terahertz metasurface sensor for concentration sensing and isomer recognition of chiral molecules

Yu He, Youwei Qiu, Mengxiang Wan et al. Jun 02, 2025 10.1063/5.0270860

The paper presents a terahertz polarization sensing method based on a metasurface for concentration and isomer recognition of chiral molecules with high sensitivity. By designing a metasurface sensor...

Radiation enhancement in shear horizontal surface acoustic wave driven magnetoelectric antenna

Rui Hu, Wenkui Lin, Yifan Fu et al. Jun 02, 2025 10.1063/5.0255272

Magnetoelectric (ME) antennas driven by shear horizontal surface acoustic waves (SH-SAWs) exhibit significant potential for miniaturized high-frequency systems owing to their structural simplicity and...

Brookite-phase vanadium (IV) oxide formation for semiconductor-to-metal transition free bolometric membrane via atomic layer deposition technique

Hyeon Ho Seol, Min Jung Chung, Seungwoo Lee et al. Jun 02, 2025 10.1063/5.0251940

In this study, we investigated the formation of brookite-phase vanadium (IV) oxide (VO2) thin films, focusing on their potential application in bolometric membranes without semiconductor-to-metal tran...

Acoustically coupled reflectors for multiplexed wavefront engineering

Xingyu Jiang, Xuejing Wang, Ying Xiao et al. Jun 02, 2025 10.1063/5.0271824

Acoustic standing wave fields, with stable pressure nodes and antinodes, are valuable in biology, medicine, chemistry, and engineering due to their noninvasive nature. While standing waves from high-i...

Generating large complete momentum gaps in temporally modulated dispersive media

Yao-Ting Wang, Yu-Huei Chen Jun 02, 2025 10.1063/5.0249939

This study investigates the generation of a large complete momentum gap (k-gap) in the Lorentzian media with a plasma frequency varying periodically in time. By using the energy expression for the Lor...

N-polar gallium nitride doping by atomic layer deposition for improved electrical performance

Boyu Wang, William J. Mitchell, Chulong Wang et al. Jun 02, 2025 10.1063/5.0261504

Atomic layer deposition (ALD) is an excellent growth technique to achieve high-quality, high-uniformity, and highly conformal films with precise growth control at low (<400 °C) substrate temper...

Giant tunneling magnetoresistance effect of van der Waals magnetic tunnel junction Fe3GaTe2/InSe/Fe3GaTe2

Ruiren Liu, Jiamin Zhou, Ru Zhang et al. Jun 02, 2025 10.1063/5.0268065

Van der Waals (vdW) magnetic tunnel junctions (MTJs), with a two-dimensional (2D) material barrier between two vdW ferromagnetic electrodes, present unprecedented opportunities to design innovative sp...

First-principles computational analysis of the electronic and charge transport anisotropy of NbO<i>X</i>2 (<i>X</i> <b>=</b> Cl, Br, I) nanoribbons and nanosheets

Quanzhen Wan, Haiping Zhou, Rui Wang et al. Jun 02, 2025 10.1063/5.0274032

The use of NbOX2 oxyhalide (X = Cl, Br, I) nanoribbons and nanosheets in next-generation nanoelectronic devices remains unfulfilled because the impact of the fundamental electronic properties of these...

Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation

Jingyang Li, Kai Chen, Chao Wu et al. Jun 02, 2025 10.1063/5.0268617

The realization of vision-based neuromorphic computing relies significantly on advancements in optoelectronic synaptic chip technology. Currently, the development of optoelectronic devices is mainly l...

Computationally designing a dual-aspheric compound lens toward multi-depth endomicroscopy imaging

Bingxin Shen, Zixian Cao, Yankan Huang et al. Jun 02, 2025 10.1063/5.0268424

This study presents a computational approach for designing a compound lens system by pairing two infinity-corrected aspheric lenses with matching ray-mapping conditions to enable three-dimensional ima...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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