Applied Physics Letters

Vol. 126, Issue 22 Issue 22 2025
57
Articles

Articles in this Issue

Surface Fermi level tuning in thin epitaxial Bi<i>y</i>Sb2−<i>y</i>Te3−<i>x</i>Se<i>x</i>/Si(111) films

N. P. Stepina, V. A. Golyashov, A. O. Bazhenov et al. Jun 02, 2025 10.1063/5.0260935

The effects of chemical treatment and aging of BiySb2−yTe3−xSex 3D topological insulator (TI) thin films on the surface electronic structure, morphology, and transport properties have been studied. Th...

Structural, electronic, and superconducting properties of MBE-grown tantalum nitride films on c-plane sapphire

Anand Ithepalli, Amit Rohan Rajapurohita, Arjan Singh et al. Jun 02, 2025 10.1063/5.0267713

Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be δ-TaN with a rock salt cubic structure and γ-Ta2N with...

Integrated fiber supercapacitor coils enabling wireless charging and passive voltage monitoring

Kui Qu, Runhan Zhang, Wanying Zuo et al. Jun 02, 2025 10.1063/5.0268969

Fiber supercapacitors (FSCs) have attracted extensive research interest in the field of flexible electronics and wearable devices. This paper presents integrated FSC coils capable of inducing charging...

Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces

Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto Jun 02, 2025 10.1063/5.0268937

Interface states near the valence band edge at a nitrided 4H-SiC(0001)/SiO2 interface were investigated by the conductance, C–ψS, and high-low methods. Consistent energy distribution of the interface...

Deducing safety margin from boiling crisis for arbitrary solid/fluid combinations through the universality of temperature fluctuations

A. Saini, V. G. Jukanti, R. P. Cowles et al. Jun 02, 2025 10.1063/5.0272298

Despite decades of research, boiling heat transfer continues to be represented using dimensional quantities (heat flux vs wall superheat relative to liquid saturation temperature). Here, we show that...

The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation

Baiwei Chen, Chuan Liao, Shaozhong Yue et al. Jun 02, 2025 10.1063/5.0262354

In this work, we study the electrical performance of AlGaN/GaN high-electron-mobility transistors following irradiation with 14 MeV neutrons at fluences of 3 × 1012, 7.4 × 1012, 1.2 × 1013, and 1.0 × ...

Impulsive excitation of squeezed phonons in single crystal germanium by an x-ray laser

Nan Wang, Haoyuan Li, Yanwen Sun et al. Jun 02, 2025 10.1063/5.0269800

In this Letter, we present the experimental observation of squeezed phonon generation in semiconductor germanium (Ge) induced by x-ray excitation. Prior x-ray pump, x-ray probe studies reported cohere...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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