Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation

Y Yu-Ting Chen C Ching-Hsueh Chiu (Department of Electronic Engineering, Chung Yuan Christian University 2 , Chung-Li 32023,) L Lu-Hsun Chen (Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,) C Chuan-Hsien Li (Department of Electronic Engineering, Chung Yuan Christian University 2 , Chung-Li 32023,) C Chii-Bin Wu (Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,) C Chi-Tsu Yuan (Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,) W Wen-Yu Wen (Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,) C Chiashain Chuang (Department of Electronic Engineering, Chung Yuan Christian University 2 , Taoyuan City 320,) D Dung-Sheng Tsai (Department of Electronic Engineering, Chung Yuan Christian University 2 , Chung-Li 32023,) Y Yueh-Chien Lee (Department of Electronic Engineering, Lunghwa University of Science and Technology 3 , Guishan, Taoyuan County 333326,) H Hertz Hsu (Wafer Works Corporation 4 , Taoyuan 32542,) W Wei Jen Hsueh (Wafer Works Corporation 4 , Taoyuan 32542,) J Ji-Lin Shen (Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,)

Abstract

GaN/AlGaN high electron mobility transistors (HEMTs) are important devices due to their high-frequency and high-power applications. The two-dimensional (2D) electron density in AlGaN/GaN heterostructures is essential for the design of the state-of-the-art HEMTs. Here, the electro-absorption of GaN/AlGaN HEMTs was investigated using photoluminescence excitation (PLE), which is a sensitive and noncontact optical technique. The built-in electric fields of the GaN and AlGaN layers in HEMTs were derived from the Stark effect in PLE. According to the discontinuity in the displacement electric fields, the 2D electron density in the heterostructures can be estimated from PLE, which agrees with the values obtained from the Hall-effect measurements.

Article Details

Volume / Issue Vol. 126, Issue 22
Published June 02, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (13)

Y

Yu-Ting Chen

C

Ching-Hsueh Chiu

Department of Electronic Engineering, Chung Yuan Christian University 2 , Chung-Li 32023,

L

Lu-Hsun Chen

Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,

C

Chuan-Hsien Li

Department of Electronic Engineering, Chung Yuan Christian University 2 , Chung-Li 32023,

C

Chii-Bin Wu

Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,

C

Chi-Tsu Yuan

Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,

W

Wen-Yu Wen

Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,

C

Chiashain Chuang

Department of Electronic Engineering, Chung Yuan Christian University 2 , Taoyuan City 320,

D

Dung-Sheng Tsai

Department of Electronic Engineering, Chung Yuan Christian University 2 , Chung-Li 32023,

Y

Yueh-Chien Lee

Department of Electronic Engineering, Lunghwa University of Science and Technology 3 , Guishan, Taoyuan County 333326,

H

Hertz Hsu

Wafer Works Corporation 4 , Taoyuan 32542,

W

Wei Jen Hsueh

Wafer Works Corporation 4 , Taoyuan 32542,

J

Ji-Lin Shen

Department of Physics and Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University 1 , Chung-Li 320314,