MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio
Abstract
We report the realization and operation of AlYN/GaN high-electron-mobility transistors (HEMTs). Metal-organic chemical vapor deposition is used to deposit AlYN/GaN semiconductor heterostructures on 100 mm SiC substrates. Polarization-induced 2D electron gas channels formed in the heterostructure exhibit room-temperature mobility >1300 cm2/V s, sheet density >1.4×1013/cm2, and sheet resistance <350 Ω/□ with good uniformity. Micron-long gate length HEMTs fabricated using regrown n+ GaN contacts demonstrate good DC performance with saturation drain current >0.4 A/mm, transconductance >0.3 S/mm, low threshold voltage VT=−2.0 V, and a high on/off ratio surpassing 109. The drain current shows a nearly negligible hysteresis with the sweep of the gate voltage. Notably, the devices exhibit a near-Boltzmann limit sub-threshold swing of 66.5 mV/dec. These observations highlight the promise of AlYN/GaN HEMTs for high-performance electronic applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Kazuki Nomoto
School of Electrical and Computer Engineering, Cornell University 3 , Ithaca, New York 14850,
Isabel Streicher
Fraunhofer Institute for Applied Solid State Physics IAF 2 , Tullastrasse 72, 79108 Freiburg,
Thai-Son Nguyen
Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853,
Chandrashekhar Savant
Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853,
Madhav Ramesh
School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,
Siyuan Ma
Department of Chemistry and the MOE Key Lab of Spectrochemical Analysis & Instrumentation, College of Chemistry and Chemical Engineering
Jimy Encomendero
School of Electrical and Computer Engineering, Cornell University 4 , Ithaca, New York 14853,
Lutz Kirste
Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg,
Patrik Straňák
Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg,
Ruediger Quay
Fraunhofer Institute for Applied Solid State Physics IAF 2 , Tullastrasse 72, 79108 Freiburg,
Stefano Leone
Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg,
Huili Grace Xing
Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,
Debdeep Jena
School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,