Scalable alloy-based sputtering of high-conductivity PdCoO2 for advanced interconnects
Abstract
As integrated circuits continue to scale down, the search for alternative metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered oxide PdCoO2 is one of the candidate materials for interconnects, having bulk ab-plane conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO2, crucial for interconnect applications, has not yet been reported. In this study, we demonstrate the scalable growth of c-axis oriented PdCoO2 thin films via reactive sputtering from Pd-Co alloy targets. Our method paves the way to harness the unique properties of PdCoO2 in semiconductor devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (5)
Takayuki Harada
Zuin Ping Lily Ang
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science 1 , Tsukuba, Ibaraki 305-0044,
Yuki Sakakibara
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science 1 , Tsukuba, Ibaraki 305-0044,
Takuro Nagai
Electron Microscopy Unit, National Institute for Materials Science 2 , Tsukuba, Ibaraki 305-0044,
Yasushi Masahiro
TANAKA Kikinzoku Kogyo K.K. 3 , Tokyo 103-0025,