Temperature-activated polar domain-wall evolution in non-polar perovskite

Z Zheyi An (Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,) H Hiroko Yokota (School of Materials and Chemical Technology, Institute of Science Tokyo 3 , 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8501,) M Marek Paściak P Pierre-Eymeric Janolin N Nan Zhang

Abstract

Polar domain boundaries in non-polar antiferroelectric crystals exhibit emergent tunable polarity, yet some fundamental questions remain to be answered—particularly the origin of the domain boundaries. Here, in antiferroelectric Pb(Zr,Ti)O3 crystals, through temperature-dependent second-harmonic-generation microscopy and x-ray diffuse scattering, we reveal that the domain-wall characteristics change actively at temperatures more than 100 K lower than that of the antiferroelectric phase transition. This observation indicates that the previously considered domain wall can be a local object. Its occurrence is associated with the competition of polar and antipolar arrangements. These findings provide a better understanding of domain boundaries in antiferroelectrics and suggest a potential control strategy for engineering polar domain boundaries in non-polar crystals.

Article Details

Volume / Issue Vol. 127, Issue 10
Published September 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

Z

Zheyi An

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,

H

Hiroko Yokota

School of Materials and Chemical Technology, Institute of Science Tokyo 3 , 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8501,

M

Marek Paściak

P

Pierre-Eymeric Janolin

N

Nan Zhang