Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe
Abstract
The peculiarities of the molecular-beam epitaxy of monocrystalline indium-doped Pb1−xSnxTe films grown on (111) BaF2 substrates were studied as a function of the indium incorporation rate in the growth process. Statistical analysis of the growth regimes and the films' electrophysical properties show that indium incorporation during the growth process affects both the growth rate and film quality. It is shown that indium inhibits film growth, demonstrating the effect of indium as a surfactant on the growth of PST thin films. The smoothest surface and maximum carrier mobility in Pb1−xSnxTe films (up to 105 cm2/V s at T = 30 K) were achieved in a narrow range of ratios (VPST(In)/VIn ≈ 2–3).
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
D. V. Ishchenko
Rzhanov Institute of Semiconductor Physics SB RAS 4 , 630090 Novosibirsk,
E. L. Molodtsova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 1 , 630090 Novosibirsk,
S. P. Suprun
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 1 , 630090 Novosibirsk,
E. D. Kyrova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 1 , 630090 Novosibirsk,
E. V. Fedosenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 1 , 630090 Novosibirsk,
O. E. Tereshchenko