Applied Physics Letters

Vol. 127, Issue 21 Issue 21 2025
40
Articles

Articles in this Issue

Characterization of anisotropic charge carrier mobility in PM6:Y6 blend film using time-resolved terahertz spectroscopy

Jiale He, Jiacong Li, Hanyue Yang et al. Nov 24, 2025 10.1063/5.0302098

In organic photovoltaic (OPV) devices, charge transport from donor–acceptor interfaces to electrodes is crucial for efficient photon-to-current conversion. In state-of-the-art OPV systems featuring no...

Ultrafast magnetization switching by combination of self-induced torque and spin transfer torque

R. Arun, R. Gopal, V. K. Chandrasekar et al. Nov 24, 2025 10.1063/5.0271834

We studied the interplay between self-induced torque (SIT) and spin transfer torque (STT) in a magnetic tunnel junction, achieving ultrafast magnetization switching. By incorporating both the torques...

Toward stable gate-controlled GaSb nanowires near-infrared photodetection and photocommunication

Bowen Yang, Zixu Sa, Guangcan Wang et al. Nov 24, 2025 10.1063/5.0287606

Surface states originating from the dangling bonds or native oxide layers are challenging III-V group semiconductor nanowires (NWs) in future electronics and optoelectronics. In this work, a plasma su...

Effect of additives on amplified spontaneous emission of quasi-2D Dion–Jacobson perovskite

Guangrui Jia, Xue Huang, Xiangrong Zhang et al. Nov 24, 2025 10.1063/5.0296533

Quasi-two-dimensional (quasi-2D) Dion-Jacobson (DJ)-type perovskites have recently received growing attention in photoelectronics for their excellent photophysical properties. However, the uncontrolla...

Modulating the carrier transport at 2D semiconductor/high-k oxide interfaces with 2D hBN interfacial layers

Zecheng Ren, Xianlong Liu, Ruoyu Lei et al. Nov 24, 2025 10.1063/5.0297036

The high-k oxide/semiconductor interface is a key component of two-dimensional (2D) field-effect transistors. However, the influence of interfacial properties, such as interfacial disorder, interfacia...

Wide-angle photon collection in deep-ultraviolet photodetectors via metalens integration

Jianhong Zhang, Wenxin Li, Jiandong Ye et al. Nov 24, 2025 10.1063/5.0299171

The authors demonstrate a compact and monolithically integrated strategy to enhance wide-angle light collection in deep-ultraviolet photodetectors operating at 265 nm by incorporating an Si3N4 metalen...

Facile and efficient regeneration of LiFePO4 battery cathode using a multifunctional lithium source

Xiaoru Liang, Qingyuan Luo, Zhan Lin et al. Nov 24, 2025 10.1063/5.0265973

Lithium iron phosphate (LFP) batteries are widely used in energy vehicles and electrochemical energy storage due to their high safety and long cycle life. However, the disposal of large quantities of...

Optically tunable synaptic transistors based on AlGaN/GaN heterostructure for neuromorphic vision processing

Xiaoqi Li, Huazhen Sun, Mei Ge et al. Nov 24, 2025 10.1063/5.0307178

Optoelectronic synaptic devices are a promising technology for overcoming the von Neumann bottleneck, meeting the demand from rapidly advancing artificial intelligence for faster, more energy-efficien...

Suppression of stochasticity in high-speed domain-wall motion of synthetic antiferromagnets

Kitae Kim, Woo Young Shim, Atsushi Okada et al. Nov 24, 2025 10.1063/5.0301833

We investigate the relationship between domain-wall (DW) speed and stochasticity in synthetic antiferromagnetic (SAF) structures. By measuring arrival-time distributions at various current densities a...

Superinductor-based ultrastrong coupling in a superconducting circuit

Alba Torras-Coloma, Luca Cozzolino, Ariadna Gómez-del-Pulgar-Martínez et al. Nov 24, 2025 10.1063/5.0293790

We present an ultrastrong superinductor-based coupling mechanism in a circuit consisting of a flux qubit galvanically coupled to an LC resonator. The coupling inductor is fabricated with granular alum...

Synergistic ion migration suppression and surface PbI2 etching via sputtered carbon barrier layer for n-i-p perovskite solar cells

Lida Liu, Wen Wang, Jie Zhang et al. Nov 24, 2025 10.1063/5.0301212

The issue of stability has been a major obstacle hindering the commercialization of perovskite solar cells (PSCs). While carbon materials have been demonstrated as effective barrier layers for suppres...

Geometry-controlled spin filtering in MoS2 nanoribbon junctions

Ye Jiang, Xin Xue, Wei-Long Shi et al. Nov 24, 2025 10.1063/5.0296377

Controlling spin polarization with simple and scalable methods is essential for advancing spintronic devices. Conventional approaches often rely on strong fields or complex heterostructures, limiting...

Sulfide-reduction strategy for constructing bimetallic BiSb microrods toward high-performance potassium ion storage

Miaoran Deng, Hengchao Sun, Long Wang et al. Nov 24, 2025 10.1063/5.0302618

In this work, we report a sulfide-reduction strategy to construct bimetallic BiSb microrods with polydopamine-derived carbon encapsulation (BiSb@PDA). The synthesis reveals that BiSbS precursors under...

GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation

Hao Chang, Junjie Yang, Jingjing Yu et al. Nov 24, 2025 10.1063/5.0300255

GaN-on-Si monolithic bidirectional switch (MBDS) enables compact power conversion systems by replacing Si- or SiC-based bidirectional switches composed of two series-connected transistors. However, du...

Soft phonon-driven structural phase transition in Ba2CaWO6

Akriti Singh, Shalini Badola, Haritima Mahajan et al. Nov 24, 2025 10.1063/5.0286383

Double perovskites (A2BB′X6) represent a class of materials known for their compositional diversity and promising functionalities. A pivotal aspect underlying their functionality is the coupling betwe...

Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering

K. Ishihara, S. Ichinokura, S. V. Eremeev et al. Nov 24, 2025 10.1063/5.0266580

We developed an in situ Hall measurement setup and measured the anomalous Hall effect (AHE) in magnetic topological insulator heterostructures MnBi2Te4/Bi2Te3 grown on different Si(111) substrate surf...

Dual-functional soft magnetic interface materials for quantum packaging

Zahra Barani, Harshil Goyal, Chase C. Tillman et al. Nov 24, 2025 10.1063/5.0294328

We report the development of soft magnetic interface materials (MIMs) designed for localized chip-scale magnetic shielding in superconducting quantum systems. These composites, composed of Mu-metal na...

Negative differential resistance in ReSe2/ <i>h</i> -BN/ReSe2 van der Waals tunnel junction

Arisa Nishimura, Kei Kinoshita, Rai Moriya et al. Nov 24, 2025 10.1063/5.0297912

Van der Waals (vdW) heterostructures composed of two-dimensional (2D) materials offer atomically sharp interfaces and atomic-level control over layer thickness, making them highly suitable for quantum...

2D multifunctional in-plane spintronic device based on half-metallic FeWS2 monolayer

Yunfei Gao, Aolin Li, Zesen Fu et al. Nov 24, 2025 10.1063/5.0299407

Two-dimensional (2D) magnetic materials are a hot topic in novel spintronic devices because of their unique physical and chemical properties induced by dimensional effects. Based on first-principles c...

A tunable flow-through membrane electrode platform for selective ion removal and enrichment

Seung-Hun Lee, In Ho Jo, Kwanoh Kim et al. Nov 24, 2025 10.1063/5.0293217

We developed a selective ion transport system based on a Pt/Ti-coated polytetrafluoroethylene membrane integrated into a flow-through membrane electrode (FTME). The membrane provided both electrical c...

No long-range magnetic order in ε-iron down to 160 mK

S. Klotz, M. d'Astuto, V. Joyet et al. Nov 24, 2025 10.1063/5.0299650

Epsilon-Fe, the high-pressure phase of elemental iron, is generally regarded as non-magnetic. However, theoretical predictions and experiments suggest that a residual magnetic moment exists, which mig...

Polarization-engineered electron transport in <i>β</i> -Ga2O3/SiC heterojunctions: Atomic-scale modulation via SiC polymorphic selection

Jiaren Feng, Qingzhong Gui, Wei Yu et al. Nov 24, 2025 10.1063/5.0279106

β-Ga2O3/SiC heterojunction has high potential to be used in high power electronics and optoelectronic devices, yet their performance is critically governed by their interfacial band properties. Here,...

Anomalous polarization evolution associated with pressure-induced topological transitions in black phosphorus

Jingyi Liu, Leilei Zhang, Zeyu Wang et al. Nov 24, 2025 10.1063/5.0297110

The fundamental interplay between pressure-driven electronic transitions and anisotropic optical responses remains unresolved in layered black phosphorus (BP), particularly regarding polarization-sele...

Anisotropy-induced deterioration of thermal transport in organic/nanowire composites

Jinxin Zhong, Zhuoyu Wang, Xiaokun Gu et al. Nov 24, 2025 10.1063/5.0304591

We investigate thermal transport in nanowire composites with anisotropic fillers. Using Monte Carlo and finite element methods, we show that anisotropy strongly suppresses effective thermal conductivi...

High-quality superconducting tantalum resonators with beta phase defects

Ritika Dhundhwal, Haoran Duan, Lucas Brauch et al. Nov 24, 2025 10.1063/5.0302324

For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter,...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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