Sulfide-reduction strategy for constructing bimetallic BiSb microrods toward high-performance potassium ion storage

M Miaoran Deng (Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, 1) H Hengchao Sun (Beijing SmartChip Microelectronics Technology Co., Ltd. 2 , Beijing 100192,) L Long Wang Z Zhibin Li J Jianxing Yang (Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, School of Physics & Optoelectronic Engineering, Jinan University 1 , Guangzhou 510632,) W Wenjie Mai (Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, College of Physics & Optoelectronic Engineering Jinan University Guangzhou China) J Jinliang Li

Abstract

In this work, we report a sulfide-reduction strategy to construct bimetallic BiSb microrods with polydopamine-derived carbon encapsulation (BiSb@PDA). The synthesis reveals that BiSbS precursors undergo a microrod growth process, and subsequent reduction under PDA-derived carbon confinement preserves their structural integrity. Benefiting from this stabilized architecture, the bimetallic BiSb@PDA microrods deliver a reversible capacity of 348 mAh g−1 after 100 cycles at 0.1 A g−1 with 88.9% retention, and maintain 264 mAh g−1 after 200 cycles at 0.3 A g−1. The performance of BiSb@PDA, characterized by its higher specific capacity compared to single-metal counterparts and acceptable retention rate, demonstrates the potential of the composite material. Comprehensive characterizations further unveil the phase-evolution mechanism of BiSb during potassiation–depotassiation process, which effectively accommodates volume changes and ensures robust potassium storage durability.

Article Details

Volume / Issue Vol. 127, Issue 21
Published November 24, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

M

Miaoran Deng

Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, 1

H

Hengchao Sun

Beijing SmartChip Microelectronics Technology Co., Ltd. 2 , Beijing 100192,

L

Long Wang

Z

Zhibin Li

J

Jianxing Yang

Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, School of Physics & Optoelectronic Engineering, Jinan University 1 , Guangzhou 510632,

W

Wenjie Mai

Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, College of Physics & Optoelectronic Engineering Jinan University Guangzhou China

J

Jinliang Li