Wide-angle photon collection in deep-ultraviolet photodetectors via metalens integration

J Jianhong Zhang W Wenxin Li (Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, Key Laboratory for Ultrafine Materials of Ministry of Education, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Engineering Research Center for Biomedical Materials of Ministry of Education, School of Materials Science and Engineering) J Jiandong Ye (School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,) W Weizong Xu (School of Electronic Science and Engineering, Jiangsu Key Laboratory of Advanced Semiconductors and High Energy Efficiency Devices, and Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Nanjing University 1 , Nanjing 210023,) D Dong Zhou F Feng Zhou R Rong Zhang (Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China) H Hai Lu F Fang-fang Ren (School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,)

Abstract

The authors demonstrate a compact and monolithically integrated strategy to enhance wide-angle light collection in deep-ultraviolet photodetectors operating at 265 nm by incorporating an Si3N4 metalens directly onto the sapphire optical window. The design addresses angular limitations of conventional packaging and achieves a 93× enhancement in photocurrent response at ±60° incidence. A single-angle phase profile is employed to simplify metalens fabrication while maintaining effective focusing over a 160° angular range. Finite-difference time-domain simulations confirm the experimental trends in angle-resolved power collection. The approach eliminates bulky optical components and offers a scalable path toward angularly adaptive and high-sensitivity UV photodetectors. Potential applications include fire detection, power grid monitoring, and secure UV communications.

Article Details

Volume / Issue Vol. 127, Issue 21
Published November 24, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

J

Jianhong Zhang

W

Wenxin Li

Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, Key Laboratory for Ultrafine Materials of Ministry of Education, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Engineering Research Center for Biomedical Materials of Ministry of Education, School of Materials Science and Engineering

J

Jiandong Ye

School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,

W

Weizong Xu

School of Electronic Science and Engineering, Jiangsu Key Laboratory of Advanced Semiconductors and High Energy Efficiency Devices, and Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Nanjing University 1 , Nanjing 210023,

D

Dong Zhou

F

Feng Zhou

R

Rong Zhang

Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China

H

Hai Lu

F

Fang-fang Ren

School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,