Effect of additives on amplified spontaneous emission of quasi-2D Dion–Jacobson perovskite

Abstract

Quasi-two-dimensional (quasi-2D) Dion-Jacobson (DJ)-type perovskites have recently received growing attention in photoelectronics for their excellent photophysical properties. However, the uncontrollable nature of the crystallization process increases the density of defect states, constraining further improvement in device efficiency. In this study, we investigated the phase distribution, energy transfer, and Auger recombination in quasi-2D perovskite HDAD(FA0.8Cs0.2)4Pb5Br16 thin films through additive methods. The results demonstrate that the incorporation of EABr enhances the radiative recombination efficiency of DJ-type perovskites. More importantly, we realized green amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 8.5 and 12.67 μJ/cm2, respectively. This study presents an approach for fabricating high-performance green lasers.