Photoluminescence properties of α-(Al <i>x</i> Ga1– <i>x</i> )2O3 thin films under excitation with synchrotron radiation
Abstract
α-(AlxGa1−x)2O3 has great potential in deep ultraviolet (DUV) optoelectronic devices due to its ultra-wide bandgap. The α-(AlxGa1−x)2O3 films demonstrated good DUV photodetection but hardly exhibited luminescence in the DUV range. To date, no reports on the luminescence properties of α-(AlxGa1−x)2O3 have been published. In this work, the photoluminescence properties of α-(AlxGa1−x)2O3 thin films from DUV to the red region at a low temperature of 40 K were systematically studied using synchrotron radiation. Based on our observations, some intriguing features have been discussed. The strong emission of α-(AlxGa1−x)2O3 in the DUV region is dominated by two bands with peaks at 239 and 258 nm. This work indicates α-(AlxGa1−x)2O3 films are potential DUV light-emitting materials.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Zewei Chen
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Yanan Guo
State Key Laboratory of Ophthalmology, Zhongshan Ophthalmic Center, Guangdong Provincial Key Laboratory of Ophthalmology and Visual Science, Sun Yat-sen University
Junxi Wang
Zhengwei Chen
Dongdong Meng
Kunpeng Ge
Department of Epitaxy, Beijing MIG Semiconductor Co., Ltd. 3 , Beijing 101300,
Jianchang Yan
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Qixin Guo
Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University 5 , Saga 840-8502,