On-chip electrically tunable silicon whispering gallery mode resonator for THz integrated circuits

H Huilin Zhang X Xuecou Tu N Ning Zhao (Institute of Photochemistry and Photofunctional Materials) S ShuYu Zhou D Dingxuan Gu (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) Z Zeyu Xu (State Key Laboratory of Materials Low-Carbon Recycling) Y Yunjie Rui (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) Z Zhanzhang Mai (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) B Bingnan Yan Z Ziyao Ye (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) H Heng Tang J Junyi Wu S Shuang Ding (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) J Jun Zhou Q Qingyuan Zhao L Labao Zhang X Xiaoqing Jia L Lin Kang J Jian Chen P Peiheng Wu

Abstract

This study demonstrates an on-chip electrically tunable whispering gallery mode resonator (WGMR) operating in the terahertz (THz) band, fabricated on a silicon platform. The device consists of a micro-ring resonator with integrated platinum electrodes for voltage application. By leveraging the thermo-optic effect of silicon, the resonant frequency of the WGMR is dynamically shifted via Joule heating induced by an applied voltage, enabling continuous electrical tuning of the resonance. Experimental results show a continuous frequency tunability of 0.40 GHz/W, with the resonator exhibiting a measured quality factor (Q-factor) of 199 around 390 GHz. This work provides a compact, integrable, and efficient solution for active resonance control in THz integrated circuits, with promising applications in reconfigurable filters, modulators, sensors, and next-generation wireless communication systems.

Article Details

Volume / Issue Vol. 128, Issue 4
Published January 26, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (20)

H

Huilin Zhang

X

Xuecou Tu

N

Ning Zhao

Institute of Photochemistry and Photofunctional Materials

S

ShuYu Zhou

D

Dingxuan Gu

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

Z

Zeyu Xu

State Key Laboratory of Materials Low-Carbon Recycling

Y

Yunjie Rui

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

Z

Zhanzhang Mai

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

B

Bingnan Yan

Z

Ziyao Ye

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

H

Heng Tang

J

Junyi Wu

S

Shuang Ding

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

J

Jun Zhou

Q

Qingyuan Zhao

L

Labao Zhang

X

Xiaoqing Jia

L

Lin Kang

J

Jian Chen

P

Peiheng Wu