Tunable spin-to-charge conversion across semiconductor–semimetal transition in large-area PtSe2 thin films
Abstract
High-speed and low-power spin–orbit torque (SOT) devices necessitate materials with high spin-to-charge conversion efficiency. Transition metal dichalcogenides (TMDs) have emerged as a promising platform for SOT research due to their topological features and band structure tunability. In this work, we fabricate large-area PtSe2 films via a two-step method and demonstrate a thickness-dependent semiconductor-to-semimetal transition. The spin-to-charge conversion efficiency of PtSe2 films exhibits an approximately sixty-fold enhancement across this semiconductor-to-semimetal transition. This work provides an alternative approach for modulating spin-to-charge conversion in TMDs and advances their potential applications in spintronics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (11)
Wenzhuo Zhuang
State Key Laboratory of Spintronics, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210093,
Wenxuan Sun
College of Chemistry
Ruijie Xu
State Key Laboratory of Spintronics, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210093,
Anke Song
State Key Laboratory of Spintronics, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210093,
Zhihao Li
Yifan Zhang
Yu Li
Di Wang
Guozhong Xing
Institute of Microelectronics, Chinese Academy of Sciences 1 , Beijing 100029,
Rong Zhang
Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China
Xuefeng Wang
Beijing National Laboratory for Condensed Matter Physics