Applied Physics Letters

Vol. 128, Issue 10 Issue 10 2026
53
Articles

Articles in this Issue

Thermally stable multistate characteristics in multidomain-driven magnetic tunnel junctions

Yapeng Zhao, Tiaoyang Li, Zhijie Wang et al. Mar 09, 2026 10.1063/5.0312080

The intermediate resistance states observed between the P and AP states of magnetic tunnel junctions (MTJs) have traditionally been considered detrimental to device reliability. This work evaluates a...

Liquid metal display and quasi-E-paper

Cai Cheng, Yibing Ma, Nan Li et al. Mar 09, 2026 10.1063/5.0314328

Gallium-based liquid metal offers exciting possibilities for soft optical interfaces, yet current approaches often rely on the introduction of heterogeneous materials. Here, we report an electrochemic...

Breaking the thermal–dielectric trade-off in high-temperature polymers via transfer learning

Ruo-Jie Cheng, Dong-Duan Liu, Qiao Li et al. Mar 09, 2026 10.1063/5.0307269

High-temperature capacitive energy storage demands dielectric polymers that integrate high thermal conductivity with excellent electrical insulation to mitigate thermal runaway induced by Joule heatin...

Phononic colloidal glasses

T. Vasileiadis, Y. Cang, M. Schöttle et al. Mar 09, 2026 10.1063/5.0317116

Colloidal glasses composed of self-assembled nanoparticles can control light transport through photonic bandgaps and non-iridescent structural color, yet their phononic properties remain largely unexp...

LLM-driven discovery for carbon allotropes with bond-network entropy

Yuzhou Hao, Yujie Liu, Xuejie Li et al. Mar 09, 2026 10.1063/5.0314279

The discovery of novel carbon allotropes with tailored thermal and mechanical properties is critical for advanced thermal management. However, exploring the vast configurational space of carbon using...

Broadening thermochromic switching into the visible and NIR by incorporating Au-doped TiO2 beneath VO2 films

Naji AlDahoudi, Jacem Zidani, Mimoun El Marssi et al. Mar 09, 2026 10.1063/5.0316461

We report a multilayer architecture in which Au nanoparticles embedded in a crystalline anatase TiO2 matrix are incorporated beneath VO2 thin films. This configuration promotes the formation of the mo...

Millimeter-wave control of copper diffusion in BaTiO3 for ceramic capacitors

Takashi Teranishi, Kanji Uefuji, Shinya Kondo et al. Mar 09, 2026 10.1063/5.0312900

The use of copper (Cu) electrodes in multilayer ceramic capacitors (MLCCs) is highly attractive due to its low cost and electrical resistivity compared with nickel (Ni). However, Cu easily oxidizes an...

Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction

Hryhorii Stanchu, Nirosh M. Eldose, Mourad Benamara et al. Mar 09, 2026 10.1063/5.0308927

We apply an approach that uses x-ray diffraction (XRD) and dynamical scattering theory to determine the resulting elemental compositions of a Ge1−ySny/Ge1−xSnx superlattice after growth by simulating...

Nonlinear guided exciton-polaritons in a van der Waals layered waveguide

Valeriy I. Kondratyev, Vanik Shahnazaryan, Mikhail Tyugaev et al. Mar 09, 2026 10.1063/5.0309067

Layered van der Waals materials offer promising opportunities for on-chip waveguiding and the development of integrated photonic circuits. In the strong light–matter coupling regime, their nonlinear r...

Investigation of AlN back barrier/GaN HEMTs with ultra-thin GaN channel for high-frequency and high-voltage applications

Wenjun Liu, Yachao Zhang, Zhizhe Wang et al. Mar 09, 2026 10.1063/5.0322145

AlN back-barrier thickness physically governs ultrathin-channel GaN high-electron-mobility transistor (HEMT) performance by dictating a competition between material states. At 440 nm, the AlN back bar...

DMF-free co-solvent doctor-bladed FA0.6MA0.4PbI3 perovskite solar cells and modules under ambient conditions

Xue Bai, Siyuan Lu, Xinyue Wang et al. Mar 09, 2026 10.1063/5.0297564

Perovskite solar cells (PSCs), recognized for their high efficiency and scalable manufacturing potential, face significant challenges in achieving uniform, high-quality large-area films via ambient do...

Tuning magnetic anisotropy and Curie temperature in two-dimensional half-metal CoOBr via alloying strategy

Mengxue Liu, Jie Wang, Zhengbo Zhao et al. Mar 09, 2026 10.1063/5.0308142

Two-dimensional (2D) half-metallic materials hold great promise for spintronic applications, yet their practical implementation is often hindered by relatively low Curie temperature (Tc) and limited m...

Sensor-free, self-regulating thermal switching via anomalous Ettingshausen effect and spin reorientation in DyCo5

Shibo Wang, Hiroki Tsuchiura, Nobuaki Terakado Mar 09, 2026 10.1063/5.0316920

We propose a sensor-free, self-regulating thermal switch that combines the anomalous Ettingshausen effect with a temperature-driven spin reorientation transition (SRT) in the rare-earth cobalt compoun...

Experimental observation of enhanced quantum-entangled two-photon absorption fluorescence at milliwatt pump power levels

Tadashi Kasamatsu, Kengo Hisamatsu, Masahiro Toida Mar 09, 2026 10.1063/5.0316664

Optical technologies based on two-photon absorption can provide high resolution and deep tissue penetration but require very high peak power intensities because of the extremely small absorption cross...

Effects of pre-deposition annealing prior to gate insulator deposition in planar AlGaN/GaN MIS-HEMT with a thin AlGaN barrier layer

Takuma Nanjo, Masayuki Furuhashi, Tatsuro Watahiki et al. Mar 09, 2026 10.1063/5.0316094

A planar-type enhancement-mode transistor, termed an extrinsically electron induced by a dielectric (EID) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (HEMT), is a promisi...

Giant spin–orbit torques in W/MgO nanostructures for energy-efficient SOT-MRAM applications

Xin Cao, Zichao Rong, Chao Wang et al. Mar 09, 2026 10.1063/5.0307470

High critical switching current density (Jc) and limited charge-to-spin conversion efficiency [spin–orbit torque (SOT) efficiency, ξSOT] of heavy metal-based SOT channels are the two key challenges fo...

Graphene-based thermal interface materials with high through-plane thermal conductivity inspired by Baumkuchen

Sihua Guo, Minghe Wang, Si Chen et al. Mar 09, 2026 10.1063/5.0310419

To enhance the thermal management capabilities of epoxy composite, inspired by Baumkuchen, a simple, scalable, and environmentally friendly process was proposed. The graphene strips, without any chemi...

A dual-functional additive for crystallization regulated and defect passivated stable inverted perovskite solar cells

Ibrahim Albrahee, Haibibu Aziguli, Tengfei Zhang et al. Mar 09, 2026 10.1063/5.0315803

The main problems holding back inverted perovskite solar cells (PSCs) are poor crystal formation and too many defects inside the perovskite layer. We address both issues by introducing 4-aminobutylpho...

Photo-induced anomalous Hall effect in Co/WS2 bilayer

Saeid Jannati, Ali Aftabi, Milad Jalali et al. Mar 09, 2026 10.1063/5.0315554

We report the observation of a photo-induced anomalous Hall effect in a ferromagnetic (FM) cobalt (Co)/tungsten disulfide (WS2) Schottky heterostructure. Unlike previously reported transition metal di...

Irradiation driven magnetism enhancement in Y-doped HfO2 films

Wenqin Xie, Jinbao Yang, Sixia Hu et al. Mar 09, 2026 10.1063/5.0307820

HfO2-based ferroelectric films are regarded as core materials for next-generation nonvolatile memories and spintronics owing to their CMOS compatibility and exceptional ferroelectricity. Yet, the minu...

Optoelectronic synapse based on a BiI3/Bi2Se3 van der Waals heterostructure for neuromorphic visions

Fuqiang Wen, Yao Meng, Hong Zhou et al. Mar 09, 2026 10.1063/5.0316774

In this paper, we demonstrate a fully optical neuromorphic vision sensor based on a BiI3/Bi2Se3 van der Waals heterostructure grown by sequential vapor deposition. High-quality vdW epitaxy produces st...

Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si

Siyu Liu, Yihao Zhuang, Pengju Cui et al. Mar 09, 2026 10.1063/5.0313481

This work investigates the impact of stress-induced effects on the stability of AlN/GaN MIS-HEMTs on Si employing PECVD-SiN as a passivation layer. DC and temperature-dependent C–V/I–V measurements to...

Magnetic aftereffect and Barkhausen jumps in thin altermagnetic Mn5Si3 films

Gregor Skobjin, Javier Rial, Sebastian Beckert et al. Mar 09, 2026 10.1063/5.0314005

In ferromagnets, the anomalous Hall effect (AHE) can exhibit time-dependent relaxation, including magnetic aftereffect and Barkhausen jumps, and thus provide insights into magnetic susceptibility and...

Double drift layers to minimize on-resistance in 2.7-kV <i>β</i> -Ga2O3 (001) vertical trench Schottky barrier diodes

Sai Charan Vanjari, Aditya K. Bhat, Matthew D. Smith et al. Mar 09, 2026 10.1063/5.0307807

Improved specific on-resistance (Ron,sp) in beta-gallium oxide (β-Ga2O3) trench Schottky barrier diodes (TSBDs) is achieved without the usual trade-off of reduced breakdown voltage, enabled through th...

Latent transition unlocks visible-to-ultraviolet upconversion for covert optical security

Lizhu Sun, Tingxing Shi, Bingbing Yang et al. Mar 09, 2026 10.1063/5.0317040

Upconversion luminescence (UCL) is transforming the landscape of optical anti-counterfeiting, particularly in the ultraviolet (UV) range, where invisible emissions enable highly advanced security feat...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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