Applied Physics Letters

Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction

H Hryhorii Stanchu (Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,) N Nirosh M. Eldose (Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) M Mourad Benamara (Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) S Serhii Kryvyi (Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) O Oleksii Liubchenko (Institute of Physics, Polish Academy of Sciences 2 , Aleja Lotnikow 32/46, PL-02668 Warsaw,) D Diandian Zhang (Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) D Dinesh Baral (Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) W Wei Du (Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China) S Shui-Qing Yu (Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,) G Gregory Salamo (Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,)

Abstract

We apply an approach that uses x-ray diffraction (XRD) and dynamical scattering theory to determine the resulting elemental compositions of a Ge1−ySny/Ge1−xSnx superlattice after growth by simulating not just peak location but also the intensity modulation of the satellite peaks of the XRD profile. Analysis of the intensity modulation of the satellite peaks of the XRD profile of a Ge1−ySny/Ge1−xSnx superlattice determined the Sn composition, strain, and layer thickness, revealing a significant exchange of Sn in each layer. The superlattice structure was additionally confirmed by transmission electron microscopy, validating the XRD approach as applicable to superlattices more generally.

Download PDF View Original
APA MLA Chicago BibTeX RIS

Article Details

Volume / Issue Vol. 128, Issue 10
Published March 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (10)

H

Hryhorii Stanchu

Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,

N

Nirosh M. Eldose

Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

M

Mourad Benamara

Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

S

Serhii Kryvyi

Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

O

Oleksii Liubchenko

Institute of Physics, Polish Academy of Sciences 2 , Aleja Lotnikow 32/46, PL-02668 Warsaw,

D

Diandian Zhang

Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

D

Dinesh Baral

Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

W

Wei Du

Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China

S

Shui-Qing Yu

Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,

G

Gregory Salamo

Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

Related Articles from this Journal

Interface engineering with an rGO electron extraction layer for high-efficiency and stable Cu2ZnSnS4-based photocathode

Zhenyan Xiao, Piao Zhang et al. Aug 2026 10.1063/5.0312010

Transmission diffuse EUV scattering by nanoscale Lamb waves in thin membranes

Alessandra Milloch, Naman Agarwal et al. Aug 2026 10.1063/5.0343558

Optimized Nb-doped SnO2 buffer layer for enhanced carrier extraction and Sb2S3 photovoltaic responses

Xinsheng Liu, Xiangyang Liu et al. Aug 2026 10.1063/5.0343471

Exceptionally high thermoelectric power factors at low temperatures in heavily doped p- and n-type Ge-rich Ge1−xSnx films

Masashi Kurosawa, Takayoshi Katase et al. Aug 2026 10.1063/5.0346412

Unlocking room-temperature magnetoelectricity in Ba1.5Sr1.5-based Z-type hexaferrites via magnetic anisotropy modulation

Huantong Wu, Jun Li et al. Aug 2026 10.1063/5.0314711