Applied Physics Letters

Vol. 128, Issue 11 Issue 11 2026
100
Articles

Articles in this Issue

Temperature- and frequency-dependent dielectric behavior in epitaxial CaSnO3 films

DongHwan Kim, Majid Mohseni, Zhifei Yang et al. Mar 16, 2026 10.1063/5.0315085

We systematically examine the dielectric response of epitaxial CaSnO3 films grown by hybrid molecular beam epitaxy. Metal-insulator-metal capacitor structures consisting of Nb:SrTiO3 (001)/t-nm CaSnO3...

Attosecond MeV γ-ray pulse compression via radiation-lifetime shortening in a longitudinal magnetic field

Pengfan Chen, Yanli Long, Anrong Fan et al. Mar 16, 2026 10.1063/5.0303752

Mega-electron volt-scale attosecond γ-ray pulses open unprecedented avenues for interrogating ultrafast electron and nuclear dynamics. However, their generation remains hampered by complex experimenta...

Robust Vth stability in normally off GaN HEMTs with a stacked p <b>+</b> /p <b>−</b> -NiO gate: Suppression of interface trapping and electric-field crowding

Ruiling Gong, Na Sun, Guang Qiao et al. Mar 16, 2026 10.1063/5.0312146

We report a normally off AlGaN/GaN high-electron-mobility transistor (HEMT) featuring a stacked p+/p−-NiO gate with an integrated p−-NiO reduced-surface-field (RESURF) terminal, enabling simultaneous...

On-chip electrically reconfigurable diffractive element and metalens with phase change material

Chongqiang Wang, Xiaoyuan Lv, Tianyang Zhao et al. Mar 16, 2026 10.1063/5.0303243

Realizing compact, reconfigurable on-chip meta-atoms capable of dynamically controlling the phase and amplitude of integrated photonic fields remains a fundamental challenge. Here, we demonstrate a re...

High-performance logic circuits based on Ag/ZnAl2O4/FTO resistive random-access memory devices

Zeren Rong, Guoshu Dai, Maocheng Liao et al. Mar 16, 2026 10.1063/5.0308701

Focusing on the in-memory computing application, this article proposes logic circuits based on Ag/ZnAl2O4/fluorine-doped tin oxide resistive random-access memory (RRAM) devices. The devices were fabri...

Broadband photoresponse enhancement in tin-based perovskites via CF3PEA <b>+</b> A-site doping

Wenhao Zheng, Guangyuan Li, Wenjing Zhai et al. Mar 16, 2026 10.1063/5.0299420

Eco-friendly tin-based perovskites have been promising lead-free alternatives for optoelectronic applications, yet their performance is limited by rapid crystallization and poor crystal quality. Here,...

Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth

Pengfei Shao, Yu Liu, Qi Yao et al. Mar 16, 2026 10.1063/5.0314880

The presence of a bilayer of metal atoms on the growth front is critical for achieving high-quality III-nitride growth via molecular beam epitaxy. To investigate the kinetics of bilayer indium (In) at...

Pulsed magnetic field-induced cell permeabilization: Dose–response and chemotherapeutic potentiation

Chi Ma, Fei Teng, Wei Zheng et al. Mar 16, 2026 10.1063/5.0326652

Non-contact pulsed magnetic field (PMF) can alter cell membrane permeability, offering a novel pathway for the transmembrane delivery of exogenous substances. However, the dose–response characteristic...

High-throughput microwave package for precise superconducting device measurement

Wei-Ren Syong, Allie Miller, Emma Davis et al. Mar 16, 2026 10.1063/5.0318350

Cryogenic microwave measurement of superconducting quantum devices is complicated by the packaging required to connect devices to control and read out circuitry. In this work, we outline the design an...

Exploring the potential of random lasers for high-quality ghost imaging

Chenxi Sun, Lihailiang Xu, Liming Gao et al. Mar 16, 2026 10.1063/5.0321349

Ghost imaging, which reconstructs object images through correlation calculations of light fields, offers several advantages such as overcoming diffraction limits and resisting turbulence or scattering...

Bulk β-SrZrS3 sulfide perovskite: A mechanically robust platform with thermoelectric potential beyond thin-film optoelectronics

Yanyan Nan, Yanbing Han, Weixia Shen et al. Mar 16, 2026 10.1063/5.0314969

Sulfide perovskites have shown great promise in thin-film optoelectronics, but their versatile potential for sustainable energy applications is severely limited by the lack of mechanical and transport...

Experimental evidence of diffuson-dominated thermal transport in amorphous diamond-like carbon nanowires

Renzong Wang, Xiongfei Zhu, Yong Li et al. Mar 16, 2026 10.1063/5.0313943

Amorphous carbon is widely employed as protective and dielectric layers in microelectronics, where its thermal transport properties play a critical role in heat dissipation. Although vibrational excit...

High-temperature ferromagnetism and large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor

Kota Ejiri, Wentao Li, Shuzo Oeda et al. Mar 16, 2026 10.1063/5.0313623

While the room-temperature anomalous Nernst effect (ANE) has been intensively studied in various ferromagnetic metals, it has never been studied in ferromagnetic semiconductors (FMSs) due to their low...

Measuring laser chirp rate at single-emitter excitation energies

Timothée Mounier, Moritz Kaiser, Mert Tuncel et al. Mar 16, 2026 10.1063/5.0315204

We present a simple and direct method for measuring laser chirp rate, i.e., group delay dispersion (GDD) of ultrashort laser pulses at power levels compatible with single-quantum-emitter excitation. T...

High energy storage characteristics in Bi6-xLaxMgTi4O18 films

Zhehong Tang, Ruonan Yao, Xiangcheng Xu et al. Mar 16, 2026 10.1063/5.0325537

Bi6-xLaxMgTi4O18 films were prepared by the sol-gel method combined with layer-by-layer plasma treatment. The incorporation of La3+ ions weakens intrinsic inter-domain interactions, enhances both the...

Formation of long-range in-plane polarization order in Bi2WO6 thin films

Yong-Jun Kwon, Yuseong Yang, Jaehyun Lee et al. Mar 16, 2026 10.1063/5.0315809

Symmetry breaking gives rise to intriguing physical phenomena, offering emergent concepts for next-generation memory devices. Ferroelectric oxide thin films, as inherently non-centrosymmetric systems,...

Sensitive x-ray and extended near-infrared detection with doped perovskite single crystal

Ruolong Zhou, Xiangshun Geng, Xiao Liu et al. Mar 16, 2026 10.1063/5.0311168

Conventional all-inorganic perovskite photodetectors typically exhibit photoresponse limited to the visible region (&amp;lt;800 nm). In this work, we demonstrate a broadband photodetection strategy by...

Exciton-polariton lasing with polarization fixing reciprocal space resolved at room temperature

Hongzhu Zhang, Si Shen, Junxing Dong et al. Mar 16, 2026 10.1063/5.0317614

Exciton-polaritons are quasiparticles that are defined by the interaction between semiconductors and optical cavities. The ultra-low effective mass of polariton quasi-particles from its photonic compo...

Enhanced LIBS detection of atomic oxygen via two-photon LIF

L. Frigerio, V. Gardette, A. Burak et al. Mar 16, 2026 10.1063/5.0308263

Laser-induced breakdown spectroscopy (LIBS) is a versatile analytical technique with applications in several fields of science and technology. It requires minimal or no sample preparation and can prov...

Transition-selective photoluminescence of InSb quantum dots on GaSb substrate

Shin-ichiro Gozu, Taiga Kito, Emin Kuwabara et al. Mar 16, 2026 10.1063/5.0319781

Transition-selective photoluminescence (TSPL) spectroscopy was applied to InSb quantum dots (QDs) grown on GaSb substrates to resolve the overlapping photoluminescence (PL) transitions that were indis...

Temperature negative self-feedback preventing thermal runaway in lead-free energy-storage ceramics

Guitian Lan, Longwen Wu, Xiaohui Wang et al. Mar 16, 2026 10.1063/5.0317306

Lead-free multilayer ceramic capacitors (MLCC) have received unprecedented attention for energy storage in constantly lightweighted and miniaturized electronic and electrical systems. However, their p...

Large thermoelastic effect in <b> <i>α</i> ″ </b> martensite of TiZrNbSn

Hua-You Xiang, Xu Guan, Dong Wang et al. Mar 16, 2026 10.1063/5.0318346

Highly reversible elastic deformation endows the associated thermoelastic effect with considerable potential for solid-state cooling. In this work, we report a large adiabatic temperature change (ΔTad...

AlGaN (2.5%) fully vertical FinFETs: Influence of <i>m</i> - and <i>a</i> -plane substrate alignments

N. S. Garigapati, A. Logotheti, B. So et al. Mar 16, 2026 10.1063/5.0310395

We demonstrate the first fully vertical single-fin AlGaN FinFETs (Al = 2.5%) on ammonothermal n+-GaN substrates, featuring a gate length of Lg = 200 nm and excellent gate control. This work presents a...

Targeted passivation via ammonium benzoate for suppressing deep-level defects of doctor-bladed CH3NH3PbI3 films

Siyuan Lu, Xinyue Wang, Xiangxiang Feng et al. Mar 16, 2026 10.1063/5.0313475

Large-scale processing of perovskite solar cells (PSCs) with superior performance under air conditions is deemed as an inevitable trajectory for low-cost and efficient commercial manufacturing. Herein...

Vortex dynamics governing oscillations in a high-pressure xenon laser-sustained plasma

Xiao Ma, Qing Xiong, Jie Li et al. Mar 16, 2026 10.1063/5.0312474

This study demonstrates that the intrinsic oscillation of the laser-sustained plasma (LSP) flow field originates from the periodic and coherent evolution of vortex rings (VRs) attached to the outer bo...

All Issues

Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
View Full Journal Page