Applied Physics Letters

Vol. 128, Issue 11 Issue 11 2026
100
Articles

Articles in this Issue

Synergistic phase regulation and heterojunction engineering achieve ultrahigh-energy density in ferroelectric polymers

Biyun Peng, Jian Wang, Weihao Dai et al. Mar 16, 2026 10.1063/5.0300801

Ferroelectric polymers are constrained in high-power energy storage capacitors (ESCs) due to their hysteresis losses and low breakdown strength. We tackle this challenge via a dual-pronged strategy en...

The effect of ω-phase precipitation on thermal- and stress-induced martensitic transformations in Ni47.5Fe15Ga27.5Co10 single crystals

E. E. Timofeeva, E. Y. Panchenko, N. Y. Surikov et al. Mar 16, 2026 10.1063/5.0318872

The key role of ω-phase nanoparticles in determining the properties of [001]-oriented Ni47.5Fe15Ga27.5Co10 single crystals under compression has been established. The ω-phase particles strongly affect...

Jet reversal in mixed bubbles induced by competing internal and boundary Kelvin impulse

Yifan Dong, Xiaoqiu He, Shangming Li et al. Mar 16, 2026 10.1063/5.0316789

High-pressure bubbles drive strongly directed re-entry jets that govern near-field hydrodynamic loading, cavitation damage, and jet-assisted applications. Jet steering is commonly attributed to extern...

Diffraction contrast imaging of hydrogen passivation of silicon using helium microscopy

Ke Wang, Abbie Lowe, Chenyang Zhao et al. Mar 16, 2026 10.1063/5.0319099

Hydrogen is a key element in the transition to a sustainable energy future, playing a vital role in clean fuel technologies, energy storage, and semiconductor engineering. Yet despite its significance...

Hydrogenation-induced gigantic resistance decrease of palladium films deposited by high pressure magnetron sputtering

Yusuke Ikeda, Takuya Kawada, Yuki Shiomi Mar 16, 2026 10.1063/5.0304819

We demonstrate a pronounced decrease in the electrical resistance of highly disordered palladium (Pd) films deposited under a high working Ar pressure using a compact film coating system. The resultin...

Deep ultraviolet photodetector based on high-quality cubic-AlN single-crystal films with nitrogen vacancies

Lu Yang, Qingbin Liu, Rui Hao et al. Mar 16, 2026 10.1063/5.0307649

Cubic aluminum nitride (c-AlN) has been regarded as a promising candidate for deep ultraviolet photodetectors. However, its epitaxial growth has been hindered by the intrinsic metastability of this ph...

Demonstration of long-wavelength infrared photodetector based on long minority carrier lifetime InAs/In0.5Ga0.5As0.5Sb0.5 type-II superlattices

Peng Du, Xuan Fang, Zhebo Bao et al. Mar 16, 2026 10.1063/5.0312069

This work demonstrates a significant advancement in the minority carrier lifetime of InAs/In0.5Ga0.5As0.5Sb0.5 type-II superlattices (T2SLs) designed for long-wavelength infrared (LWIR) detection. The...

Wavelike thermal phonons revealed by localization in graphene phononic crystals

Bin Liu, Zhiguo Tian, Alexander A. Barinov et al. Mar 16, 2026 10.1063/5.0316529

The high Debye temperature and ultralong phonon mean free paths (MFPs) of graphene phononic crystals (GPnCs) enable wavelike phonon transport to manifest over extended length scales, making them an id...

Polar topological transitions in PbTiO3 thin films affected by oxygen vacancy content and film thickness

Fei Sun, Jianhua Ren, Yiwei Wu et al. Mar 16, 2026 10.1063/5.0276769

Topological polar textures in ferroelectric films show fundamental physics, intriguing topology, and technological prospects. Understanding the conditions for the emergence of polar topological textur...

Blooming flexoelectricity in 2D materials revealed via second-harmonic generation

Honghao Li, Xiangping Zhang, Shengyao Su et al. Mar 16, 2026 10.1063/5.0314707

Flexoelectricity—the coupling between strain gradients and polarization—offers a powerful route to engineer electromechanical responses, yet its straightforward detection at the nanoscale remains chal...

Decay dynamics of topological valley-Hall edge states in multicomponent diffusive systems

H. Tanaka, J. J. Nakane, K. Funayama Mar 16, 2026 10.1063/5.0312464

Triggered by the discovery of topological insulators, applications that utilize topological properties are extended to diffusion systems. In this study, we investigate the decay dynamics of topologica...

Photoreflectance at operating bias links interface traps to photovoltaic performance in ZnSnP2 solar cells

Isshin Sumiyoshi, Yoshitaro Nose Mar 16, 2026 10.1063/5.0307738

We apply photoreflectance (PR) and electrically biased PR (EBPR) to quantify the electric field and interface trap density at the CdS/ZnSnP2 junction in ITO/CdS/ZnSnP2/Cu3P/Cu solar cells and relate t...

3 <i>d</i> cation substitution for tuning the magnetic properties of ultrathin La-based high-entropy perovskite oxides

Miaobing Ruan, Yi Wu, Baichao Liu et al. Mar 16, 2026 10.1063/5.0321365

A single-crystal high-entropy oxide provides an ideal structure to explore how multication substitution affects magnetic properties. In this study, several ultrathin La-based low-, medium-, and high-e...

Quantitative insight into illumination-induced barrier lowering mediated by self-trapped-holes in Ga2O3 Schottky photodiodes

X. Y. Pei, S. H. Gu, F.-F. Ren et al. Mar 16, 2026 10.1063/5.0310226

Anomalously high photoresponsivity exceeding the theoretical photovoltaic limit has been widely reported in Ga2O3 Schottky barrier photodiodes (SBPDs) but seldom observed in heterojunction photodiodes...

Stimulated emission and optical gain in II–VI semiconductor ZnCdSe/ZnCdMgSe multiple quantum well heterostructures

Ahamed Jubair, Kuaile Zhao, Vladimir Kartazaev et al. Mar 16, 2026 10.1063/5.0313732

Steady-state and time-resolved photoluminescence (PL), stimulated emission, and optical gain characteristics of two molecular beam epitaxy-grown ZnCdSe/ZnCdMgSe multiple quantum well (MQW) heterostruc...

Plasma-induced symmetric ambipolar transport in MoS2/WSe2 p–n heterojunctions via stacking-order-mediation

Shaodan He, Zhaofang Cheng, Lina Chen et al. Mar 16, 2026 10.1063/5.0313734

Ambipolar semiconductors based on two-dimensional p–n junctions have attracted significant attention and are driving optoelectronic and logic circuit applications. However, their low carrier mobility...

MgCdTe buffer layers for MBE growth of high-quality HgCdTe—An approach toward curved imaging arrays

Shuo Ma, Wenwu Pan, Renjie Gu et al. Mar 16, 2026 10.1063/5.0310460

For next-generation infrared imaging systems, there is a growing demand for large field of view operation with reduced optical aberrations, which has motivated the development of curved HgCdTe focal p...

Interface-engineered top-gate indium-tin-oxide thin-film transistors with 2-nm channels

Tsung-Che Chiang, Yu-ming Zhang, Jo-Lin Chen et al. Mar 16, 2026 10.1063/5.0313940

The fabrication of top-gate (TG) field-effect transistor structure in amorphous oxide semiconductor systems remains challenging due to interfacial degradation associated with oxygen-deficient states a...

High mobility quaternary AlGaScN/GaN heterostructures grown by metalorganic chemical vapor deposition

V. R. Muthuraj, C. E. Vozel, M. Kim et al. Mar 16, 2026 10.1063/5.0315491

Quaternary AlGaScN may mitigate ongoing growth challenges with metalorganic chemical vapor deposition (MOCVD)-grown AlScN, namely, compositional inhomogeneities, interface quality, and high impurity l...

Modified spectral encoding for single-shot broadband terahertz detection based on cross-polarized wave

Jianshuo Wang, Xuhui Jiao, Zhiyong Qin et al. Mar 16, 2026 10.1063/5.0315590

Achieving both high temporal resolution and a high signal-to-noise ratio (SNR) in single-shot terahertz (THz) coherent detection remains a significant challenge. In this work, we present an improved e...

Fermi level shifting of CVD-grown MoS2 nanosheets by cobalt doping-driven charge transfer and systematic strain

Manoj Kumar Kumawat, Asheesh Kumawat, Akanksha Pandey et al. Mar 16, 2026 10.1063/5.0304655

Precise control of the Fermi level in two-dimensional materials is critical for modulating their electronic structure, thereby facilitating their effective implementation in advanced electronic and op...

Effect of Al2O3 capping layer on the crystallization behavior of optical Sb2S3 films

Taolu Sun, Yingqi Chen, Guoxiang Wang et al. Mar 16, 2026 10.1063/5.0320836

Nanoscale Sb2S3 utilizes the reversible crystalline-amorphous phase transition and is widely used in phase-change memory and near-infrared optoelectronic devices. However, a critical bottleneck persis...

Magnetically critically enhanced hybrid hBN quantum thermometer

Tianke Wang, Haojie Zhou, Qian Zhang et al. Mar 16, 2026 10.1063/5.0322618

The boron vacancy (VB−) defects in hexagonal boron nitride (hBN) have shown significant potential in various quantum sensing due to their unique properties. Particularly, the VB− defects are particula...

Differentially enhanced parallel rotating neuron reservoir computing for dynamic gas mixture identification

Ting Zhou, Bin Liu Mar 16, 2026 10.1063/5.0322616

Accurate identification of mixed gases under dynamically varying concentration conditions is a critical challenge in environmental monitoring and industrial safety. However, the performance of existin...

Synergistic bandgap and heterojunction engineering in YbSnO thin films for high-performance self-powered solar-blind photodetection

Yujie Guan, Shiya Huang, Qiuling Lai et al. Mar 16, 2026 10.1063/5.0320076

Exploring semiconductor materials with suitable bandgaps and chemical stability is crucial for constructing solar-blind ultraviolet (SBUV) photodetectors with high stability, high responsivity, and hi...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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