High-performance logic circuits based on Ag/ZnAl2O4/FTO resistive random-access memory devices

Abstract

Focusing on the in-memory computing application, this article proposes logic circuits based on Ag/ZnAl2O4/fluorine-doped tin oxide resistive random-access memory (RRAM) devices. The devices were fabricated via spin coating and inkjet printing, demonstrating bipolar resistive switching behaviors, along with excellent cycle endurance (>6000 cycles), long-term retention capacity (>5 × 104 s), and good uniformity. Furthermore, fundamental logic gates (NOR, AND, and XNOR gates) and an n-bit adder were implemented using these devices. To study their arithmetic performance and computational reliability, a non-ideal simulation model of the RRAM devices was developed. The computation success rate of the logic gates is confirmed to be greater than 99.96%. Notably, the proposed n-bit adder exhibits a small footprint (6n + 1 computing units) and low latency (2n + 8 clock cycles).