High-temperature ferromagnetism and large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor
Abstract
While the room-temperature anomalous Nernst effect (ANE) has been intensively studied in various ferromagnetic metals, it has never been studied in ferromagnetic semiconductors (FMSs) due to their low Curie temperature (TC). In this work, by optimizing the growth condition, we have grown an n-type (In,Fe)Sb FMS thin film with high TC ∼ 460 K at the Fe concentration of 30%, which is the highest TC reported so far in n-type FMSs. Using the high-TC (In,Fe)Sb thin film, we observe ANE with a large thermopower SxyANE = −3.2 μV/K at 332 K and −1.3 μV/K at 447 K. The large ANE in (In,Fe)Sb at room temperature is comparable to those observed in Mn3Sn and Co2MnGa topological materials.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
Kota Ejiri
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro, Tokyo 152-8550,
Wentao Li
Shuzo Oeda
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro, Tokyo 152-8550,
Yun Jaeyeon
Department of Electrical Engineering & Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,
Kota Iwakura
Department of Electrical Engineering & Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,
Masaaki Tanaka
Department of Electrical Engineering & Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,
Pham Nam Hai
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Tokyo 152-8550,