Temperature- and frequency-dependent dielectric behavior in epitaxial CaSnO3 films
Abstract
We systematically examine the dielectric response of epitaxial CaSnO3 films grown by hybrid molecular beam epitaxy. Metal-insulator-metal capacitor structures consisting of Nb:SrTiO3 (001)/t-nm CaSnO3/100-nm Pt (top electrode) were fabricated to characterize the dielectric properties of CaSnO3, including the dielectric constant (κ) and loss tangent across wide temperature (1.8–400 K) and frequency ranges (20 Hz–1 MHz). Films exhibited a dielectric constant of ∼17 and a low loss tangent (<0.02), independent of thickness and electrode geometry. The minimal variation with temperature and frequency highlights CaSnO3's potential as a robust, low-loss, high-κ dielectric for advanced oxide electronics and gate insulator applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (5)
DongHwan Kim
Majid Mohseni
Department of Chemical Engineering and Materials Science, University of Minnesota 1 , Twin Cities, Minneapolis, Minnesota 55455,
Zhifei Yang
Department of Chemical Engineering and Materials Science, University of Minnesota−Twin Cities
Anusha Kamath Manjeshwar
Department of Chemical Engineering and Materials Science, University of Minnesota 1 , Twin Cities, Minneapolis, Minnesota 55455,
Bharat Jalan
Department of Chemical Engineering and Materials Science, University of Minnesota−Twin Cities