Applied Physics Letters

Vol. 128, Issue 15 Issue 15 2026
60
Articles

Articles in this Issue

Conductivity conversion of N-doped diamond by additional B ion implantation

Yuhei Seki, Kaiya Imamura, Yasushi Hoshino Apr 13, 2026 10.1063/5.0326366

We report the first successful formation of inversion doping in diamond achieved by ion implantation, realizing conductivity conversion from n-type to p-type. Type Ib diamond containing nitrogen donor...

Correlation between giant surface potential and enthalpy relaxation in vacuum-deposited organic films

Tsuyoshi Tsujioka, Hiroyuki Kawashima, Kenji Koike et al. Apr 13, 2026 10.1063/5.0322473

It is well known that vacuum deposition of organic molecules possessing electric dipoles leads to spontaneous molecular orientation, resulting in the formation of a giant surface potential (GSP). The...

Elasticity assessment of intestinal tissues using endoscopic optical coherence elastography

Huiyi Fang, Xiaochen Meng, Chongyang Wang et al. Apr 13, 2026 10.1063/5.0324600

Strain-based optical coherence elastography (OCE) is a functional imaging modality derived from optical coherence tomography (OCT), which evaluates biomechanical properties by measuring tissue strain....

Metal-modulated phonon transport in porphyrin-based MOFs

Hui-Ling Kuang, Hua Tong, Yu-Jia Zeng et al. Apr 13, 2026 10.1063/5.0319716

Metal centers in porphyrin-based frameworks induce distinct thermal transport behaviors, yet their atomistic origins remain unclear. Here, first-principles calculations combined with machine-learned i...

Evolution of boron nitride structures from hexagonal to cubic and wurtzite phases: A machine-learning potential approach

Yunchao Wu, Lichuan Zhang, Yuanping Chen et al. Apr 13, 2026 10.1063/5.0326291

Boron nitride (BN) is one of the most structurally stable and widely used boron compounds. However, studies on the microscopic mechanism of three-dimensional BN synthesis have so far relied solely on...

Retention improvement in vertical NAND flash memory using block soft erase scheme

Sung-Ho Park, Dongbeen Shin, Mingyun Oh et al. Apr 13, 2026 10.1063/5.0310928

We propose a block soft erase method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory while significantly reducing soft erase time. Unlike prior incremental-step-pulse-e...

Continuous topological charge manipulation with radially varying polarizations

Xiang Zhang, Xuanguang Wu, Xuanyu Wu et al. Apr 13, 2026 10.1063/5.0331927

Topological charge (m), a fundamental quantity characterizing optical orbital angular momentum (OAM), has been intensively studied primarily as a discrete integer. However, realizing topological charg...

Polyhydroxy organic molecule-cross-linked polyvinylidene fluoride with enhanced breakdown strength and energy density

Hao Ren, Xiaoyi Zhang, Shuxuan Li et al. Apr 13, 2026 10.1063/5.0320313

Polyvinylidene fluoride (PVDF) has been extensively studied for dielectric energy storage applications owing to its excellent dielectric properties. There remains a persistent demand to enhance its br...

UV ozone oxidized high- <i>k</i> TaO <i>x</i> dielectric with van der Waals interface for two-dimensional electronic devices

Tong Tong, Yuan Gao, Yinfeng Long et al. Apr 13, 2026 10.1063/5.0321761

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) due to their superior gate control capabilities, dangling-bond-free surfaces, an...

On-demand microwave single-photon source based on tantalum thin films

Ying Hu, Sheng-Yong Li, En-Qi Chen et al. Apr 13, 2026 10.1063/5.0316437

Single-photon sources are crucial for quantum information technologies. Here, we demonstrate a microwave single-photon source based on tantalum thin films, whose favorable material properties enable h...

Observation of anomalous exciton-polariton bands in (PEA)2PbI4 perovskite based microcavity at room temperature

Chunzi Xing, Xiaokun Zhai, Peilin Wang et al. Apr 13, 2026 10.1063/5.0323218

Recently, anomalous energy bands with negative mass attract intensive attention where non-Hermiticity plays an important role. In this work, we observe anomalous exciton-polariton bands in (PEA)2PbI4...

Nanoscale crystallization of Cr2Ge2Te6 thin films induced by terahertz near-fields

D. Kim, M. Kawaji, R. Tamaki et al. Apr 13, 2026 10.1063/5.0316592

Cr2Ge2Te6 (CrGT) is a promising phase-change material exhibiting low operating energy and a thermally stable amorphous phase, suitable for next-generation nonvolatile memory. To assess its nanoscale s...

Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures

Qingru Wang, Quan Dai, Xinkun Zhang et al. Apr 13, 2026 10.1063/5.0314039

This paper presents a method for extracting electron drift velocity vs electric field characteristics in AlGaN/GaN Fin structures by combining Fin-Hall bar and Fin-Transmission Line Model measurements...

Chain length effect of large organic cations on the amplified spontaneous emission and lasing properties of quasi-2D Dion–Jacobson perovskites

Yixiao Dong, Dongyang Wang, Mengyao Li et al. Apr 13, 2026 10.1063/5.0318927

Quasi-two-dimensional (quasi-2D) Dion–Jacobson (DJ) perovskites modified with large organic cations exhibit superior optoelectronic properties and stability compared to their three-dimensional (3D) co...

Atomic layer etching-enabled interface engineering for reduced subthreshold swing and improved uniformity in p-channel GaN MOSFETs

Zixian Jiang, Zhiyuan Liu, Tingang Liu et al. Apr 13, 2026 10.1063/5.0319913

In this work, enhancement-mode p-MOSFETs on p-GaN/AlGaN/GaN-on-Si substrates were fabricated using a gate recess process that combines reactive ion etching (RIE) with atomic layer etching (ALE), where...

Carbon-doped quasi-bulk hexagonal boron nitride grown by HVPE

Z. Alemoush, M. Almohammad, J. Li et al. Apr 13, 2026 10.1063/5.0326417

We report characterization of 4-in. diameter carbon-doped hexagonal boron nitride (h-BN:C) quasi-bulk crystals (100 μm in thickness) produced by hydride vapor-phase epitaxy. X-ray diffraction characte...

A green and general room-temperature synthesis of doped 0D perovskites for tunable and enhanced luminescence

Shaolong Liu, Ying Zhao, Jingxuan He et al. Apr 13, 2026 10.1063/5.0321675

Zero-dimensional (0D) double perovskite Cs2ZrCl6 has emerged as a promising lead-free phosphor due to its strong quantum confinement, excellent stability, and tunable luminescence. However, the conven...

Demonstration of high-fidelity gates in a strongly anharmonic with long-coherence C-shunt flux qubit

Silu Zhao, Li Li, Weiping Yuan et al. Apr 13, 2026 10.1063/5.0311512

We demonstrate high-fidelity single-qubit gates on a C-shunt flux qubit that simultaneously combines a large anharmonicity (A/2π=848  MHz) with long relaxation time (T1=23 μs). The large anharmonicity...

Simulation study of low-field proton magnetic resonance spectroscopy using optically pumped magnetometers

Ryo Enari, Hiroyuki Ueda, Kazuyoshi Yoshii et al. Apr 13, 2026 10.1063/5.0322432

We numerically investigated the feasibility of low-field magnetic resonance spectroscopy (MRS) using optically pumped magnetometers (OPMs). Low magnetic fields reduce signal strength and spectral reso...

On-chip FSR manipulation of optical frequency combs with a four-wave mixing time lens

He Huang, Chen Liu, Yaoshuai Li et al. Apr 13, 2026 10.1063/5.0325808

Precise control of the free spectral range (FSR) in high-repetition-rate (e.g., 100 GHz) optical frequency combs is critical for advanced applications but remains technically challenging. The frequenc...

Flexoelectric-stabilized hierarchical polar bubbles in wrinkled ferroelectric CuInP2S6

Di Fan, Yonglan Hou, Tongfei Zhang et al. Apr 13, 2026 10.1063/5.0326857

The realization of complex, high-order topological textures in ferroelectrics typically relies on demanding epitaxial growth under substrate clamping. Here, we report hierarchical polar bubbles in the...

Spin-state regulation-enhanced piezoelectric-polarization-driven catalytic kinetics in 1T-dominant MoS2

Zhongxu Yuan, Yuze Sun, Zhen Zhang et al. Apr 13, 2026 10.1063/5.0324791

1T-dominant MoS2, owing to its relatively high electrical conductivity, facilitates charge transport induced by piezoelectric polarization; however, the reaction kinetics are still constrained by rapi...

Hardware edge detection system based on a self-assembled vertically aligned ferroelectric memristor

Biao Yang, Zelei Jiao, Junfeng Yu et al. Apr 13, 2026 10.1063/5.0331839

Real-time image processing faces significant challenges in traditional von Neumann systems due to data transfer bottlenecks between the processor and memory. Neuromorphic computing offers a promising...

Ferroelectric switchable magnon valley and nonlinear Hall effect in type-I multiferroics

Quanchao Du, Jinlian Lu, Xueqing Wan et al. Apr 13, 2026 10.1063/5.0316023

Electric control of magnetism at room temperature is crucial for developing next-generation high-performance spintronics. However, the intrinsic incompatibility between ferroelectricity and magnetism...

Digitally programmable kirigami metamaterials via magnetic encoding

Qinlian Kang, Jinbo Yang, Chenyang Ji et al. Apr 13, 2026 10.1063/5.0318941

The vast configuration space of magnetic metamaterials, enabled by embedding reversibly orientable magnets into rotating-square kirigami pixels, remains largely unexplored beyond uniform magnetization...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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