Correlation between giant surface potential and enthalpy relaxation in vacuum-deposited organic films

T Tsuyoshi Tsujioka (Division of Math, Sciences, and Information Technology in Education, Osaka Kyoiku University 1 , 4-698-2, Asahigaoka, Kashiwara, Osaka 582-8582,) H Hiroyuki Kawashima K Kenji Koike (Tosoh Corp 2 ., 2743-1, Hayakawa, Ayase, Kanagawa 252-1123,) N Naoki Matsumoto Y Yohei Ono (Tosoh Corp 2 ., 2743-1, Hayakawa, Ayase, Kanagawa 252-1123,) J Junwei Shen (Research and Education Institute for Semiconductors and Informatics, Kumamoto University 3 , 2-39-1, Kurokami, Chuo, Kumamoto 860-8555,) S Shinichiro Nakamura

Abstract

It is well known that vacuum deposition of organic molecules possessing electric dipoles leads to spontaneous molecular orientation, resulting in the formation of a giant surface potential (GSP). The GSP is expected to be useful for energy-harvesting devices, and improving carrier injection in organic light-emitting diodes; therefore, maximizing the GSP is crucial for device performance. Here, we systematically investigate the factors governing GSP formation by examining the roles of glass transition temperature (Tg), substrate temperature (Tsub), and deposition rate using a series of organic materials, including adamantane derivatives, diarylethenes, and spiropyrans. The molecular orientation parameter ⟨cosθ⟩ exhibits a clear dependence on Tg, indicating that surface molecular dynamics during deposition play a dominant role. We demonstrate that the GSP slope is maximized when Tsub is maintained at approximately 0.8–0.85 Tg. This condition coincides with the maximum enthalpy relaxation of vapor-deposited organic glasses. Based on these results, we propose a three-regime model describing GSP generation as a function of surface molecular mobility (Tsub/Tg scaling), providing practical guidelines for maximizing GSP in vapor-deposited organic thin films.

Article Details

Volume / Issue Vol. 128, Issue 15
Published April 13, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

T

Tsuyoshi Tsujioka

Division of Math, Sciences, and Information Technology in Education, Osaka Kyoiku University 1 , 4-698-2, Asahigaoka, Kashiwara, Osaka 582-8582,

H

Hiroyuki Kawashima

K

Kenji Koike

Tosoh Corp 2 ., 2743-1, Hayakawa, Ayase, Kanagawa 252-1123,

N

Naoki Matsumoto

Y

Yohei Ono

Tosoh Corp 2 ., 2743-1, Hayakawa, Ayase, Kanagawa 252-1123,

J

Junwei Shen

Research and Education Institute for Semiconductors and Informatics, Kumamoto University 3 , 2-39-1, Kurokami, Chuo, Kumamoto 860-8555,

S

Shinichiro Nakamura