Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures
Abstract
This paper presents a method for extracting electron drift velocity vs electric field characteristics in AlGaN/GaN Fin structures by combining Fin-Hall bar and Fin-Transmission Line Model measurements. Carrier density and Ohmic contact resistivity were independently extracted as a function of Fin width, enabling accurate calculation of internal electric field and drift velocity from pulsed I–V curves. It is revealed that the drift velocity decreases with the narrowing of Fin width due to enhanced sidewall influence, and multi-channel structures show higher drift velocity thanks to weaker interaction between electrons and longitudinal optical phonons. This measurement method provides a quantitative approach for studying carrier transport behavior under high electric field, offering a fundamental tool for Fin-based device design and modeling.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Qingru Wang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,
Quan Dai
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 1 , Suzhou 215123,
Xinkun Zhang
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,
Yu Zhou
Xiaoning Zhan
Beijing Key Laboratory for Science and Application of Functional Molecular and Crystalline Materials, Department of Chemistry and Chemical Engineering, School of Chemistry and Biological Engineering
Qian Li
Jianxun Liu
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,
Jiaanli Wang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,
Cheng Li
Qian Sun
Meixin Feng
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,
Hui Yang