Chain length effect of large organic cations on the amplified spontaneous emission and lasing properties of quasi-2D Dion–Jacobson perovskites

Y Yixiao Dong D Dongyang Wang M Mengyao Li Z Zhongpo Zhou (Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, and School of Physics, Henan Normal University 2 , Xinxiang 453007,) C Chaochao Qin (School of Physics Henan Normal University Xinxiang P. R. China) Z Ziyu Wang

Abstract

Quasi-two-dimensional (quasi-2D) Dion–Jacobson (DJ) perovskites modified with large organic cations exhibit superior optoelectronic properties and stability compared to their three-dimensional (3D) counterparts, making them promising for light-emitting diodes and lasing applications. While diammonium cations with linear chain structures are preferred due to their hydrogen-bonding capability and enhanced structural stability, the effect of cation chain length remains insufficiently understood. Here, we systematically investigate three diammonium spacers with varying chain lengths. Ultrafast spectroscopy reveals that longer-chain cations promote pronounced phase separation, which facilitates the formation of a high-quality n=2 phase, uniform phase distribution, efficient energy transfer, and suppressed non-radiative recombination. These effects collectively reduce the amplified spontaneous emission threshold, from 41.94 μJ/cm2 (EDA, short-chain) and 29.86 μJ/cm2 (BDA, medium-chain) to an ultralow 7.67 μJ/cm2 (PentDA, long-chain). Using this optimized gain medium, we demonstrate a single-mode vertical-cavity laser with a threshold of 6.75 μJ/cm2, a narrow linewidth of 0.49 nm, and a high-quality factor of 1093.8. Conversely, short-chain cations lead to weak phase separation and an insufficient n=2 phase content, resulting in film transient absorption characteristics dominated by excited-state absorption. This study clarifies the critical role of cation chain length in tuning the phase behavior and optical gain of quasi-2D DJ perovskites, providing guidance for their use in low-threshold laser devices.

Article Details

Volume / Issue Vol. 128, Issue 15
Published April 13, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

Y

Yixiao Dong

D

Dongyang Wang

M

Mengyao Li

Z

Zhongpo Zhou

Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, and School of Physics, Henan Normal University 2 , Xinxiang 453007,

C

Chaochao Qin

School of Physics Henan Normal University Xinxiang P. R. China

Z

Ziyu Wang